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  • 1
    Electronic Resource
    Electronic Resource
    Holey-plate plasma source using a partial-coaxial microwave cavity (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 1710-1712 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: High-density microwave plasma created and sustained by evanescent waves emitted from a holey plate has been studied. This source is called a holey-plate plasma source. Microwave power at 2.45 GHz is supplied from a coaxial cavity and then converted into an evanescent mode through the use of a holey plate. The plate is made from a 0.5 mm thick, 54 mm diam stainless steel sheet with 2.5 mm diam, 3.6 mm pitch holes, thus allowing high-density plasma to be generated near the surface of the plate. An evanescent electric field is produced from the cavity resonator to a plasma production chamber that is 54 mm in diameter. A detailed description of the plasma source and the plasma characteristics are presented in this article. The plasma density is 6.5×1011 cm−3 with an electron temperature of 3 eV at an argon gas pressure of 2 Pa. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149655
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  • 2
    Electronic Resource
    Electronic Resource
    Holey-plate ion source : The 8th international conference on ion sources (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 710-712 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A low-pressure and high-density microwave ion source, created and sustained by evanescent waves emitted from a holey plate (HP) has been studied. This source is called a HP ion source. Microwave power at 2.45 GHz is supplied from a rectangular waveguide and then converted into an evanescent mode through the use of a HP placed on a H plane located at one end of the rectangular waveguide. The argon plasma density in the ion source is 1×1011 cm−3 with an electron temperature of 3 eV. A 150 mm×150 mm argon ion beam is extracted from the ion source. The ion current densities are in excess of 2 mA/cm2 at an extraction voltage of 1 kV. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150269
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  • 3
    Electronic Resource
    Electronic Resource
    A design study for a holey-plate structure surface-wave ion source : Proceedings of the 7th international conference on ion sources (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 1069-1071 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A low-pressure and high-density microwave ion source, created and sustained by a surface wave, using a partial-coaxial cavity resonator has been newly developed for the production of stable beams from gaseous feed materials. This source is called a holey-plate surface-wave ion source. A microwave of 2.45 GHz is supplied from a holey plate which is made from a 0.5 mm thick stainless steel sheet with 4 mm diameter and 5 mm pitch holes to a plasma production chamber of 40 mm diameter and 11 mm in length. An 18-mm-diameter argon ion beam is extracted and accelerated from the ion source. The ion current densities are in excess of 6 mA/cm2 at an extraction voltage of 1 kV and at microwave powers of less than 100 W. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148635
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  • 4
    Electronic Resource
    Electronic Resource
    Development of surface-wave ion source using coaxial-type cavity (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 79-82 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A compact 2.45 GHz surface-wave ion source has been developed for the production of stable beams from gaseous feed materials. The source has been operated with two different geometries of surface wave generation, that is, a dielectric disk on ground plane structure and a dielectric disk between the parallel plate structure with a holey top plate. The designer can control the intensity of the emitted microwave simply by varying the thickness of the dielectric plate. The sources have been operated with three different thicknesses of the dielectric plate: td=10, 15, and 20 mm. td=10 mm is the optimum coupling condition. Moreover, the ion beam current of the holey-plate structure is 1.5 times as high as that of the dielectric disk structure. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147746
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  • 5
    Electronic Resource
    Electronic Resource
    Microwave-enhanced magnetron sputtering (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 179-183 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A sputtering source utilizing both microwave and dc planar magnetron plasmas is described. Microwave power is introduced into the plasma by a coaxial-type cavity. The magnetron target is placed on the open end of the inner conductor. The microwave propagation from the surface of the plasma column produces additional gas ionization, resulting in a denser plasma at constant voltage. The operating pressure of this source is one-tenth as low as that of a conventional magnetron source. Measured deposition uniformity for Cu is ±4.5% within a 10-cm diameter at dc 100 W and microwave 800-W discharge powers for a 15-cm-diam magnetron at 6×10−4 Torr. The plasma impedance decreases with an increase in the inner conductor diameter and target diameter. The target-plasma sheath potential can be controlled by microwave power.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142953
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  • 6
    Electronic Resource
    Electronic Resource
    Disk plasma generation using a holey-plate surface-wave structure on a coaxial waveguide (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 2032-2036 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Plasma created and sustained by a surface wave from a partial-coaxial cavity resonator have been studied. In this work, two types of plasma source geometries are compared, (1) a dielectric disk on ground plane structure (DPSW), and (2) a dielectric disk between a parallel plate structure with a holey top plate (HPSW). In both cases, an evanescent electric field is produced from the cavity resonator to a plasma production chamber of 40 mm diameter. Thus, high-density plasma is generated by the interaction of the evanescent field with particles. This work shows that the plasma density and uniformity of the holey-plate structure is higher than that of the dielectric disk structure. For the holey-plate structure, the plasma density is 7.5×1011 cm−3 with an electron temperature of 3 eV at an argon gas pressure of 13 Pa. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148894
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  • 7
    Electronic Resource
    Electronic Resource
    Development and application of a nozzle-beam-type microwave radical source (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1015-1017 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Characteristics and application of a nozzle-beam-type microwave radical source are described. This source generates microwave plasma in a space between a nozzle and a skimmer for exciting a processing gas. Long-lived metastable nitrogen molecules effective for film growth processes are observed clearly in this source. p-type doping of ZnSe films was achieved by employing this source with N2 plasma which was installed in a molecular-beam epitaxy system. A net acceptor concentration of 5.4×1017 cm−3 was obtained by C–V measurements with lower microwave power of 50 W and lower gas flow of 0.06 sccm compared to conventional rf plasma sources. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146517
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  • 8
    Electronic Resource
    Electronic Resource
    Plasma properties in the open-ended region of a coaxial-type microwave cavity (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 1498-1503 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A sputtering source utilizing both microwave and dc planar magnetron plasmas is described. Microwave power is introduced into the plasma by a coaxial-type cavity. The magnetron target is placed on the open end of the inner conductor. This source produces a plasma which is well matched, stable, and can operate continuously at gas pressures from 3×10−4 to 2×10−2 Torr. Plasmas with densities greater than 1011 cm−3 are obtained at gas pressure of 10−4 Torr using a microwave power of 100 W. The deposition rate of Cu is more than 0.13 μm/min for an argon gas pressure of 3×10−4 Torr, and microwave and dc powers of 100 W, respectively. This new source has many potential uses such as sputtering, etching, and chemical vapor deposition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142475
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  • 9
    Electronic Resource
    Electronic Resource
    Characteristics of a nozzle–beam-type microwave radical source : Proceedings of the 6th international conference on ion sources (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 1006-1008 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The characteristics and application of an antenna–nozzle-type microwave radical source are described. This source generates microwave plasma in a space between a nozzle and a skimmer to excite a processing gas. The source has a nozzle of 0.6 mm aperture at the tip of the microwave radiation antenna, followed by a 1.2 mm skimmer, and gases pass through the skimmer so that a molecular beam contains radicals. The total atomic oxygen flux is 1.2×1016 atoms/s at a power of 50 W and an O2 flow rate of 0.5 sccm. Thus, a high-density radical source with a compact structure and low power consumption is realized. Moreover, p-type doping of ZnSe films was achieved by employing this source with N2 plasma, which was installed in a molecular-beam epitaxy system. A net acceptor concentration of 5.1×1017 cm−3 was obtained by C–V measurements with a lower microwave power of 30 W and a lower gas flow of 0.02 sccm. This source is promising for film growth in ultrahigh vacuum processing. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146798
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  • 10
    Electronic Resource
    Electronic Resource
    Production of an atomic oxygen beam by a nozzle-beam-type microwave radical source (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 4166-4169 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Characteristics of a nozzle-beam-type microwave radical source are described. This source generates microwave plasma in a space between a nozzle and a skimmer to excite a processing gas. The source has a nozzle of 0.6 mm aperture, followed by a 1.2 mm skimmer, and gases pass through the skimmer so that a molecular beam contains radicals. The total atomic oxygen flux is 1.8×1016 atoms/s at a power of 130 W and an O2 flow rate of 2 SCCM. It is possible to optimize the beam profile by varying the combination of the nozzle and the skimmer. Thus, a high-density radical source with a compact structure and low power consumption is realized. This source is promising for oxide film growth in an ultrahigh vacuum processing. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145365
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