ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We carried out the characterization of the crystallinity of the solution growthself-standing silicon carbide (SiC) crystals, which were grown from Si-C-Ti ternary solution withAccelerated Crucible Rotation Technique (ACRT). The self-standing crystal exhibitedhomogeneous green color without cracks and inclusions. The crystallinity of the self-standingcrystal was characterized by various precise XRD diffraction measurements, such as の-scan rockingcurve measurement, X-ray topography and reciprocal lattice mapping. The Full Width at HalfMaximum (FWHM) of the の-scan rocking curves was about 20 arcsec. The X-ray topographyshowed a large area with a homogeneous orientation. The reciprocal lattice mapping exhibited asharp single peak indicating the excellent crystallinity. Finally we confirmed rather highcrystallinity of the self-standing crystals by etch pits measurement using molten KOH etching
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.303.pdf
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