Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
59 (1991), S. 1227-1229
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The nitrogen-doped Czochralski (CZ) silicon crystals were grown in a nitrogen atmosphere under reduced pressure. The results show that the resistivity of n-type N-doped silicon increases rapidly with annealing time above 700 °C, but that of p-type N-doped CZ silicon decreases rapidly under the same conditions. It is suggested that thermal acceptors (TA) are formed in N-doped silicon. The concentration of thermal acceptor can reach to 1×1014 atom/cm3. The higher the annealing temperature, the longer the time for the maximum thermal acceptor concentration to appear. Nitrogen and oxygen impurities play important roles for generating the thermal acceptor. It is postulated that the thermal acceptor is a kind of Si-O-N complex.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.105511
Permalink
|
Location |
Call Number |
Expected |
Availability |