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  • 1
    Electronic Resource
    Electronic Resource
    Plane Electromechanical Fieldes in a Piezoelectric Material with a Crack (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 324-325 (Nov. 2006), p. 247-250 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: A two-dimensional electromechanical analysis is performed on a transversely isotropicpiezoelectric material containing a crack based on the impermeable electric boundary condition. Byintroducing stress function, a general solution is provided in terms of triangle series. It is shown thatthe stress and electric displacement are all of 1/2 order singularity in front of the crack tip. Inaddition, the electromechanical fields in the vicinity of the crack when subjected to uniform tensilemechanical load are obtained using boundary collocation method
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/52/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.324-325.247.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Very high purity InP layer grown by liquid-phase epitaxy using erbium gettering (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 468-470 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Very high purity InP layers have been grown by liquid phase epitaxy using rare-earth erbium as the donor-gettering source. All the Er-doped samples still exhibit n-type conduction, but its carrier concentration decreases with increasing the Er amount into the growth solution. The 300 K electron concentration as low as 7×1013 cm−3 has been achieved on high-purity layers. By low-temperature photoluminescence measurement, the donor impurities of the InP samples have been obviously reduced due to the Er gettering. The free-exciton line with a linewidth of 0.9 meV dominates in the exciton spectra and the intensity ratio of free exciton to exciton-bound-to-neutral-donor lines exceeds 2.6 for the high-purity layers with n=7×1013 cm−3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353875
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  • 3
    Electronic Resource
    Electronic Resource
    Photoluminescence of high-quality GaSb grown from Ga- and Sb-rich solutions by liquid-phase epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4275-4280 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of photoluminescence from the high-quality unintentionally doped GaSb layers grown by liquid-phase epitaxy has been studied. The epitaxial layers grown at temperatures above 590 °C, from the Ga- or Sb-rich solutions, reproducibly have a low-carrier concentration of 6–8×1015 cm−3 and exhibit p-type conduction. But it gives n type as grown from the Ga-rich solution at 360 °C. For the samples grown from the Ga-rich solutions, the 16 K photoluminescence spectrum is dominated by the partially resolved lines related to the transitions of excitons bound to donors and neutral acceptors. The acceptor-related band (777.8 meV) which is always presented in the GaSb material due to the native lattice defects has been much reduced as compared to the exciton-related lines. Especially for the n-type samples grown at low temperatures (360 °C), the ratio of the emission intensity from the exciton-related lines to that from the acceptor-related band is 10. For the samples grown from the Sb-rich solutions, the 16 K photoluminescence spectrum is also dominated by a bound exciton-related line with a full width at half maximum of 4.2 meV. In addition, the free-exciton transition with a full width at half maximum of 0.4 meV is also observed. As the temperature is increased, the intensity of the lines associated with the bound excitonic transitions for all the GaSb samples rapidly quenches off and the free-electron-to-free-hole transition becomes dominant. The temperature dependent band gap in GaSb layers determined from the photoluminescence peak energy varies as 0.813–[1.08×10−4 T2/(T−10.3)] eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352216
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  • 4
    Electronic Resource
    Electronic Resource
    Stress-induced outdiffusion of Be in p+ GaAs prepared by molecular-beam epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2767-2772 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The well-known abnormal outdiffusion problem of heavily Be-doped GaAs prepared by molecular-beam epitaxy was found to be initiated by the shrinkage of the lattice constant of the (p+) GaAs epilayer. Through detailed investigation of the double-crystal x-ray spectra, van der Pauw measurements, photoluminescence, and infrared-absorption spectra of Be-doped GaAs for various doping concentrations, it is found that there exists a critical doping concentration, i.e., 2.6×1019/cm3, beyond which the lattice constant of the epilayer starts to shrink and the Be outdiffusion into the substrate is significantly enhanced. Apparently, the tensile stress on the epilayer results in the abnormal Be outdiffusion. The absorption coefficient of Be-doped GaAs in the 8–10 μm region with carrier concentration 8.3×1019/cm3 are found to be about 104 cm−1 which is useful for the application of this layer to a p+-type AlGaAs/GaAs heterojunction infrared detector.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351527
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  • 5
    Electronic Resource
    Electronic Resource
    Photoluminescence study of rapid thermal annealing from nitrogen-implanted In0.32Ga0.68P (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1769-1773 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence studies were performed to evaluate the results of rapid thermal annealing of nitrogen-implanted In0.32Ga0.68P layers, which were grown on GaAs0.61P0.39 substrates by a supercooling liquid-phase-epitaxial method. When the annealing temperature used is between 600 and 840 °C with 30 s duration, the N isoelectronic trap can be activated with an activation energy of 0.48 eV which is necessary to place N atoms into P sites. The 9 K photoluminescence spectrum is dominated by the sharp near-band-gap peak EgΓ and the broad N-related band Nx. The N level is located ∼110 meV below the Γ-band minimum for the In0.32Ga0.68P alloy. By selecting different annealing temperatures and times, the optimum annealing condition to obtain the strongest emission intensity of the band Nx is at T=800 °C and 30 s duration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351648
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  • 6
    Electronic Resource
    Electronic Resource
    Growth-temperature dependence of electrical and luminescent properties of high-quality GaSb grown by liquid-phase epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1101-1103 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth-temperature dependence of electrical and photoluminescent properties from high-quality GaSb layers grown by liquid-phase epitaxy has been studied. At the growth temperature of 600 °C, a hole concentration of ∼ 1 × 1017 cm−3 is obtained and the 16 K photoluminescence spectrum is dominated by the line BE2 at 802.9 meV associated with excitons bound to acceptors, and a stronger band-acceptor emission band at 777.8 meV. With reducing the growth temperature, the hole concentration gradually decreases, as does the line BE2 in the photoluminescence spectrum. The GaSb layer conduction converts from p to n with a minimum hole concentration of 2–6 × 1015 cm−3 when the growth temperature is below 450 °C. The line D located at 808.2 meV, due to a donor-bound exciton transition, becomes dominant and the band-acceptor emission becomes very weak at lower growth temperatures. The is the first report on the growth-temperature dependence of the excitonic transitions from high-quality GaSb layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351786
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  • 7
    Electronic Resource
    Electronic Resource
    Growth and characterization of Ga0.65In0.35P orange light-emitting diodes by metalorganic vapor–phase epitaxy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1781-1786 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: p-n Ga0.65In0.35P homostructure light-emitting diodes grown on GaAs0.7P0.3 substrates have been fabricated by low-pressure metalorganic vapor-phase epitaxy. The growth and characterization of undoped, Si-, and Zn-doped layers are described in detail. The optimum growth condition to grow the high-quality Ga0.65In0.35P epitaxial layers is at the growth temperatures of 700–740 °C and V/III ratios of 100–200. The strongest photoluminescence peak intensity occurs at 2×1018 and 7×1017 cm−3 for electron and hole concentrations, respectively. Diodes fabricated from the p-n homostructure are characterized by current-voltage measurement, electroluminescence, and external quantum efficiency. A forward-bias turn-on voltage of 1.68 V with an ideality factor of 2.5 and a breakdown voltage of 9 V are obtained from the current-voltage measurements. The emission peak wavelength and full width at half-maximum of electroluminescence are around 610 nm and 79 meV at 20 mA. The external quantum efficiency of the uncoated diode is about 0.015%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354781
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  • 8
    Electronic Resource
    Electronic Resource
    Photoluminescence of liquid-phase epitaxial Te-doped GaSb (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8495-8501 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence (PL) spectra of Te-doped GaSb epitaxial layers grown from Ga-rich solutions by liquid-phase epitaxy have been studied in the electron concentrations from 8×1015 to 4×1018 cm−3. The electron concentration can be accurately controlled by varying the growth temperature and adding the polycrystalline Te-doped GaSb to replace half or all the undoped GaSb starting material in the growth solution. The dependence of line position, line intensity, spectral shape, and broadening on the doping level, power excitation, and temperature has been investigated in detail. At concentrations as low as 1×1016 cm−3, the GaSb sample has become degenerate because of the small effective mass of electrons and the broad band consisting of five partially resolved line dominates the low-temperature PL spectra. At concentrations above 1×1018 cm−3, the 19 K PL spectra is mainly dominated by the sub-band-gap, substrate-induced line A' at 775.8 meV which is enhanced by the scattering of light off the back surface. This line A' is direct evidence for the band-gap shrinkage at high doping level. This is the first report to present the detailed luminescence lines in the PL spectra of the Te-doped GaSb samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354085
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  • 9
    Electronic Resource
    Electronic Resource
    Electrical and photoluminescent properties of high-quality GaSb and AlGaSb layers grown from Sb-rich solutions by liquid-phase epitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1725-1728 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth-temperature dependence of electrical and photoluminescent (PL) properties of GaSb and Al0.065Ga0.935Sb layers grown from Sb-rich solutions by liquid-phase epitaxy has been studied. The GaSb and AlGaSb epitaxial layers grown at 606 °C exhibit a low hole concentration of 4×1015 and 2×1016 cm−3, respectively. The low-temperature PL spectra of GaSb and AlGaSb is dominated by free-exciton transition and excitons bound to neutral acceptors. As the growth temperature is increased, both the residual hole concentration and the intensity of band A related to native lattice defects in GaSb and AlGaSb increase. The high-quality GaSb and AlGaSb epitaxial layers can be grown at low temperatures from Sb-rich solutions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359576
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  • 10
    Electronic Resource
    Electronic Resource
    Photoluminescence properties of N-implanted Al0.30Ga0.70As0.62P0.38 alloy grown on GaAs0.61P0.39 substrates (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 123-128 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Luminescence data are presented on nitrogen-implanted Al0.30Ga0.70As0.62P0.38 epitaxial layers, which are grown on GaAs0.61P0.39 substrates by liquid-phase epitaxy, with different annealing temperatures by the rapid thermal annealing technique. Except for the four emission peaks observed from undoped AlGaAsP layers, involving near-band-to-band, donor-to-valence-band, conduction-band-to-acceptor, and donor-acceptor-pair transitions, we also observe the recombinations from the NΓ, N'Γ, and Nx states associated with the nitrogen isoelectronic impurity in the N-implanted AlGaAsP layer. The existence of such states has been predicted by a theory of the N trap that includes both the long- and short-range characters of isoelectronic impurity potential in III-V alloys. The states NΓ and N'Γ are observed to lie below the Γ conduction-band minimum by 24 and 16 meV, respectively. The Nx state is associated with indirect emission and is below the Γ conduction-band minimum by 34 meV. This is a report on the luminescence study of N-implanted AlGaAsP alloy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354143
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