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  • 1
    Electronic Resource
    Electronic Resource
    Gridless ionized metal flux fraction measurement tool for use in ionized physical vapor deposition studies (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 1525-1529 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Ionized physical vapor deposition is a technique for sputtering metal into small trenches, by ionizing sputtered metal atoms so that their trajectories can be controlled by electric fields. To this date no one has quantified exactly what fraction of the metal vapor is ionized, although the trends of how ionization varies with input parameters is known. This article describes and demonstrates a new quartz crystal microbalance design, which can be used to measure the ionized metal flux fraction arriving at the substrate location. Instead of using grids to repel ions as similar devices do, this analyzer works by applying a voltage bias to the front surface of the crystal in order to repel ions. A magnetic field adjacent to the face limits electron current to the microbalance, minimizing its perturbation of the plasma. The measurement tool described in this article does not suffer from complications caused by placing grids in front of the monitor and is an attractive method for characterizing ionized physical vapor deposition systems. Ion and neutral metal fluxes as a function of ionizer power are presented for an argon/copper discharge. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149618
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  • 2
    Electronic Resource
    Electronic Resource
    Measurements of electromagnetic fields in a planar radio-frequency inductively coupled plasma source (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 90-96 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electromagnetic fields in a planar radio-frequency inductively coupled plasma source were measured using an inductive loop (B-dot) probe. The probe was oriented to measure the time derivative of the axial component of the magnetic field (B(overdot)z). Using these measurements and Faraday's law, taking advantage of cylindrical symmetry, the time varying azimuthal electric field (Eφ) was calculated directly. Contour plots of B(overdot)z and Eφ in the r-z plane show that the radio-frequency electromagnetic fields penetrate further into the plasma at lower gas pressure and lower rf power, corresponding to less effective shielding of the fields at lower plasma density. Estimates of skin depth from the axial decay of the field amplitudes near the axis of the discharge are consistent with values calculated from plasma parameters measured with Langmuir probes, confirming that near the axis the degree of shielding is most strongly dependent on the local plasma density. Near the conducting walls of the chamber, the skin depth calculations from the Langmuir probe data diverge from the B-dot probe data. B-dot probe measurements taken in the absence of plasma show that near the walls of the chamber the axial decay of the field amplitude is partly a geometrical effect in addition to a plasma shielding effect. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360585
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  • 3
    Electronic Resource
    Electronic Resource
    Plasma properties determined with induction loop probes in a planar inductively coupled plasma source (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1298-1302 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electromagnetic fields in a planar rf inductively coupled plasma source, of interest for materials processing, were measured using a two-loop inductive (B-dot) probe. The two loops were oriented to measure the time derivative of the axial and radial components of the magnetic field B(overdot)z and B(overdot)r, respectively, at various positions in the r–z plane of the cylindrically symmetric argon discharge. Maxwell's equations were used with this data to calculate amplitudes of the rf azimuthal electric field Eφ and current density Jφ, as well as the complex permittivity ε of the plasma, from which the electron density ne was calculated. The electron densities calculated using this technique were found to compare favorably to the results of measurements made with Langmuir probes. Electron drift velocities calculated from Jφ and ne were found to be comparable to electron thermal velocities in the region of highest Eφ and thus may contribute to local enhancement of electron impact reactions, thereby affecting process chemistry and uniformity. The peak in the drift velocity moved radially outward as the pressure increased due changes in the radial plasma density profile. This technique is applicable to chemistries where Langmuir probes are not practical. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361025
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  • 4
    Electronic Resource
    Electronic Resource
    Control of ion energy distribution at substrates during plasma processing (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 643-646 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Control of ion energy distribution functions (IEDF) at the substrate during plasma processing is achieved using a specially tailored voltage waveform for substrate bias, consisting of a short voltage spike in combination with a slow ramp. A much narrower IEDF is possible compared to the conventional approach of applying a sinusoidal waveform to the substrate electrode. Measurements in a helicon plasma combined with a time-dependent spherical-shell plasma fluid model demonstrate the benefits of this method in producing a narrow IEDF of precisely controllable energy, independent of ion mass. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373715
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  • 5
    Electronic Resource
    Electronic Resource
    An rf sustained argon and copper plasma for ionized physical vapor deposition of copper (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7556-7561 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Langmuir probe, optical emission spectroscopy, and biased quartz crystal microbalance measurements were used to investigate an argon and copper plasma used for ionized physical vapor deposition of copper. Copper vapor generated by a magnetron sputter discharge is ionized upon passing through an argon discharge excited by an internal rf induction antenna. Argon plasma characteristics such as electron temperatures Te, plasma densities ne, and plasma and floating potentials Vp and Vf, were studied as a function of argon pressure and rf power. An increase of plasma density versus rf discharge power and argon pressure was observed. The radial profile of plasma density measured by a Langmuir probe reveals a peak ion density at the center of the rf antenna and an increase in the radial ion concentration gradient with argon pressure. The ratios of optical emission intensities from Cu+ ion and Cu neutral lines increase with rf discharge power and argon pressure. The biased quartz crystal microbalance measurements show an increase of both Cu+ ion flux and the ratio of Cu+ ion to Cu neutral fluxes with rf power and argon pressure; however, they also show a decrease of total Cu flux with increasing argon pressure. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370554
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  • 6
    Electronic Resource
    Electronic Resource
    Passive external radio frequency filter for Langmuir probes (2001)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 2926-2930 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A tunable passive circuit is introduced for radio frequency (rf) filtering of Langmuir probes used to measure plasma properties. The circuit produces a high impedance between the probe tip and ground so that the probe tip follows potential fluctuations in the plasma so that the probe bias voltage with respect to the plasma is constant on the time scale of rf fluctuations. Filtering is implemented at the fundamental frequency (13.56 MHz in this case) and the second and third harmonics. Representative probe traces and electron energy distribution functions from an inductively coupled plasma are presented to demonstrate filter performance. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1376139
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  • 7
    Electronic Resource
    Electronic Resource
    Absolute densities of long lived species in an ionized physical vapor deposition copper–argon plasma (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3208-3219 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical absorption spectroscopy has been used to measure absolute, average gas phase densities of neutral copper, ground and metastable states, and neutral argon, metastable and resonance states, in an ionized physical vapor deposition plasma. Spectroscopic measurements were carried with a xenon arc lamp as a high intensity, continuum light source, and an optical multichannel detector. Copper radiative transitions in the wavelength range of 324.8–510.6 nm and argon radiative transitions in the 706.7–811.5 nm range were employed. The curve of growth method has been used to calculate the absolute line average densities from fractional absorption data. For a copper–argon plasma of neutral pressure 30 and 10 mTorr copper metastable state densities were found to lie in the range of 1010–1012 cm−3. Comparison of these densities with neutral copper densities derived from independent measurements of neutral copper flux at the substrate indicate gas phase temperatures greater than 1500 K under certain experimental conditions. These values of inferred temperatures indicate the copper metastable state density to be significant in comparison with neutral copper ground state densities at 10 and 30 mTorr with radio frequency heating power of 1 kW. The concentrations of argon 4s sublevels of the first excited state were found to be in the range of 4.5×108–1.5×1011 cm−3 for the experimental conditions studied. The ordering of the relative densities of the argon 4s sublevels and the variation of the lumped first excited state with experimental parameters are discussed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1289219
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  • 8
    Electronic Resource
    Electronic Resource
    Electron heating by sheaths in radio frequency discharges (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4718-4726 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The detailed interaction of individual electrons with oscillating radio frequency (rf) sheaths is considered in this reexamination of the sheath heating process. We develop an analytic expression for the energy delivered to the discharge through sheath heating and that lost due to electron escape to the electrode. Using a simple model of the time-dependent sheath electric field, we find that electron energy gain due to this process, averaged over an rf period is roughly proportional to the square of the maximum sheath speed and drops slightly with increasing electron temperature. Energy loss due to escaping electrons on the other hand, rises with temperature and ultimately outweighs gain when the average electron velocity exceeds the maximum sheath velocity. The requirement of a net power input to the plasma places upper bounds on bulk electron temperature and density attainable by plasmas to be maintained solely by this mechanism, independent of other aspects of container geometry. However, by increasing discharge frequency, power input can be increased for a fixed sheath voltage while reducing electron escape.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350662
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  • 9
    Electronic Resource
    Electronic Resource
    Nonlocal electron kinetics in a low-pressure inductively coupled radio-frequency discharge (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 537-539 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Boltzmann equation for electrons is analyzed for a low-pressure inductively coupled rf discharge in argon driven by a planar coil. Spatially resolved probe measurements of the electron distribution function (EDF) indicate that the total energy of electrons is an argument of the EDF. Pressure dependence of the light emission distribution is explained on the basis of nonlocal electron kinetics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112290
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  • 10
    Electronic Resource
    Electronic Resource
    Experiments with back side gas cooling using an electrostatic wafer holder in an electron cyclotron resonance etching tool (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1926-1928 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Wafer temperature, etch rate, and etch uniformity measurements of SiO2 wafers were made to characterize the use of back side helium cooling with an electrostatic wafer holder in an electron cyclotron resonance etching tool. The etch rate was found to be independent of the wafer temperature in the range between 20 and 110 °C. A 7% increase in etch nonuniformity (3σ) at higher backside pressures was attributed to helium, which leaked around the edge of the wafer, displacing the etchant gas. A back side pressure of 2–3 Torr provides a balance between wafer temperature control and helium leak rates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111744
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