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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Biochemistry 16 (1977), S. 2680-2685 
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 98 (1976), S. 2018-2019 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 98 (1976), S. 3020-3021 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1033-1040 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The amorphous silicon hydrogen alloys (a-Si:H) prepared by plasma-enhanced chemical-vapor deposition are implanted with various impurities, i.e., phosphorus, silicon and boron, followed by 250 °C thermal annealing and hydrogen passivation. A critical phosphorus dosage of 5×1015 cm−2 is found, beyond which the doping effect becomes evident and the electrical properities of the films are comparable to the n+ a-Si:H deposited by glow-discharge decomposition of SiH4 and PH3. The silicon and boron implantation have less effect since the dosage is below 1015 cm−2. It is found that the conductivity of the implanted sample after annealing is determined by three competing mechanisms, i.e., annihilation of the implant-induced defects, defect creation due to hydrogen evolution, and the impurity activation. From the IR spectra of the high dosage phosphorus-implanted samples, a broad peak due to PHx radicals located from 2100 to 3500 cm−1 is found. In addition, most of the voids are found to be filled by extra P ions during annealing, so very few hydrogen atoms can be driven into the film after hydrogen passivation. In photoluminescence spectra, the high-energy peak at 1.4 eV drops very quickly and the low-energy shoulder at 1.25 eV becomes evident after implantation. It is found that Brodsky's quantum-well model can be successfully applied to explain the observed results.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 543-550 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To improve the bias-induced degradation in hydrogenated amorphous silicon thin film transistor, the hydrogen in the amorphous silicon film should be replaced by deuterium. The stability of deuterated amorphous silicon thin film transistors, i.e., the shifts of threshold voltage and subthreshold swing, is indeed improved compared to that of the hydrogenated ones. This result is consistent with the improvement of the light-induced degradation in deuterated amorphous silicon films and this improvement can be explained by the efficient coupling between the Si–D wagging mode and the amorphous silicon phonon mode. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1498-1500 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied light-induced photoconductivity degradation in an intrinsic hydrogenated and deuterated amorphous-silicon (a-Si) alloy. Deuterated a-Si turns out to be more stable under light exposure. A possible mechanism is proposed to explain this phenomenon. It is attributed to the highly efficient coupling between the localized Si–D wagging modes (∼510 cm−1) and the extended Si–Si lattice vibration modes (∼495 cm−1). The energy released from electron or hole capture at silicon dangling bonds causes localized vibrations of nearby Si–D bonds. The energy dissipates quickly to the background lattice and a higher recombination rate at local sites is needed in deuterated a-Si than in hydrogenated amorphous silicon to accumulate enough energy to break the nearby weak bonds. © 1997 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3060-3062 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phosphorus outdiffusion during glow discharge deposition of amorphous silicon hydrogen alloy (a-Si:H) is investigated. From the measurement of phosphorus profile using secondary ion mass spectroscopy on a double layer structure (n+/i/quartz and i/n+/quartz), it is found that the thermally assisted phosphorus diffusion is negligibly small at 300 °C. However, the phosphorus diffusion is enhanced significantly after passivation with hydrogen plasma at the same temperature. It is proposed that the release of phosphorus by atomic hydrogen to form PHx radicals is the rate limiting step for enhanced diffusion.
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  • 8
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of medicinal chemistry 20 (1977), S. 243-249 
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Journal of biomedical science 1 (1994), S. 139-146 
    ISSN: 1423-0127
    Keywords: Atria, human ; Cardiomyocytes ; Prostaglandin ; Action potential ; Contractile force ; Ionic currents
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract The aim of this study was to characterize the electropharmacological effects of prostacyclin (PGI2) in human atrial fibers and cardiomyocytes. Atrial tissues obtained from the hearts of 28 patients undergoing corrective cardiac surgery were used. Transmembrane action potentials were recorded using a conventional microelectrode technique, and twitch force by a transducer. Effects of PGI2 (1 nM–10 µM) on action potential characteristics and contraction of atrial fibers were evaluated in normal [K]o (4 mM) and high [K]o (27 mM) in the absence and presence of cardiotonic agents. In addition, atrial and ventricular myocytes were isolated enzymatically from atrial tissues and hearts of 4 patients undergoing cardiac transplant. The effects of PGI2 on Na- and Ca-dependent inward currents (INa and ICa) of cardiomyocytes were tested. In 9 human atrial fibers showing fast-response action potentials (mean dV/dtmax = 101 ± 15 Vs−1) in 4 mM [K]o, PGI2 did not influence dV/dtmax of phase 0 depolarization even at 1 µM. However, at a concentration as low as 10 nM, PGI2 depressed spontaneous rhythms or slow-response action potentials in high-K-depolarized fibers. PGI2 also depressed delayed afterdepolarizations and aftercontractions induced by cardiotonic agents. In isolated cardiomyocytes, PGI2 reduced ICa but not INa. The present findings show that, in human atrial fibers and cardiomyocytes, PGI2 induces greater depressant effects on the slow-response action potential, ICa and triggered activity than on the fast-response action potential. It is suggested that PGI2 may act through a selective reduction of transmembrane Ca influx.
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  • 10
    ISSN: 1423-0127
    Keywords: Lung injury ; Nitric oxide synthase inhibitors ; Nitric oxide ; IL-1β
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract Endotoxin shock is characterized by systemic hypotension, hyporeactiveness to vasoconstrictors and acute lung edema. A nitric oxide synthase (NOS) inhibitor, NG-monomethyl-L-arginine (L-NMMA) has been shown to be effective in reversing acute lung injury. In the present study, we evaluated the effects of NOS blockade by different mechanisms on the endotoxin-induced changes. In anesthetized rats, lipopolysaccharide (LPS,Klebsiella pneumoniae) was administered intravenously in a dose of 10 mg/kg. LPS caused sustained systemic hypotension accompanied by an eightfold increase of exhaled NO during an observation period of 4 h. After the experiment, the lung weight was obtained and lung tissues were taken for the determination of mRNA expressions of inducible NOS (iNOS), interleukin-1β (IL-1β) and tumor necrosis factor-α-(TNF-α). Histological examination of the lungs was also performed. In the control group injected with saline solution, mRNA expressions of iNOS, IL-1β and TNF-α were absent. Four hours after LPS, the mRNA expressions of iNOS and IL-1β were still significantly enhanced, but TNF-α was not discernibly expressed. LPS also caused a twofold increase in lung weight. Pathological examination revealed endothelial damage and interstitial edema. Various NOS inhibitors were given 1 h after LPS administration. These agents included Nω-nitro-L-arginine methyl ester (L-NAME, 10 mg/kg), a constitutive NOS and iNOS inhibitor; S,S′-1,4-phenylene-bis-(1,2-ethanedinyl) bis-isothiourea dihydrobromide (1,4-PBIT, 10 mg/kg), a relatively specific iNOS inhibitor, and dexamethasone (3 mg/kg), an inhibitor of iNOS expression. These NOS inhibitors all effectively reversed the systemic hypotension, reduced the exhaled NO concentration and prevented acute lung injury. The LPS-induced mRNA expressions of iNOS and IL-1β were also significantly depressed by these NOS inhibitors. Our results suggest that NO production through the iNOS pathway is responsible for endotoxin-induced lung injury. Certain cytokines such as IL-1β are possibly involved. These changes are minimized by NOS inhibitors through different mechanisms.
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