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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 92 (1990), S. 2296-2302 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Guided ion-beam techniques are used to measure the cross sections for reaction of CF4 with Ar+, Ne+, and He+ from thermal to 50 eV. Dissociative charge transfer followed by successive loss of F atoms are the major processes observed. Only CF+x (x=1–3) products are observed in the reactions of Ar+ and Ne+. With He+, in addition to the CF+x products, both C+ and F+ are seen at high kinetic energies. Reaction rates for these reactions are also given and compared with previous measurements. It is found that the energy dependence of the cross sections can be understood by considering the energies needed to access specific electronic states of the CF+4 ion.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 2213-2224 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Guided ion-beam techniques are used to measure the cross sections for reaction of SiF4 with Ar+, Ne+, and He+ from thermal to 50 eV. Charge transfer followed by loss of F atoms are the sole processes observed. All SiF+x (x=0–4) products are observed, except for SiF+4 from reaction with Ne+ and He+, and Si+ from reaction with Ar+. At high energies, the dominant products are SiF+3 in the Ar system, and SiF+ in both the Ne and He systems. There is some evidence in the Ne system for an excited state of SiF+3 at 5.7 eV. In the Ar+ and Ne+ reactions, the observed energetics are consistent with literature thermochemistry, but with He+, reaction barriers are observed. A value of ΔH0f,298 (SiF+3)=−30.1±0.9 kcal/mol is derived, which is in agreement with previous values but is much more precise. The observed product distributions and energetics are explained by consideration of the potential energy surfaces and the difference in ionization potentials of the rare gases. Finally, the relationships of these reactions to plasma deposition and etching are discussed.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 88 (1988), S. 6898-6910 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The title reaction is studied using guided ion beam mass spectrometry. Absolute reaction cross sections are measured as a function of kinetic energy from thermal to 40 eV, and three endothermic product channels are observed. The dominant SiF++SiF3 channel is only slightly endothermic, while the SiF+3 +SiF and SiF+2 +SiF2 channels have much higher thresholds. The SiF+3 cross section magnitude is about half that of SiF+, while the SiF+2 cross section is an order of magnitude smaller than that of SiF+. A second feature which appears in the SiF+2 cross section is due to dissociation of SiF+3 . There is evidence that SiF+ and SiF+3 are produced via a direct mechanism. Competition between these two channels is interpreted in terms of molecular orbital correlations and qualitative potential energy surfaces. One surface is found to correlate only with the SiF+3 +SiF channel, while another correlates diabatically with this channel and adiabatically with the SiF++SiF3 channel. Competition on this latter surface has an energy dependence which is consistent with the Landau–Zener model. Reaction thresholds are analyzed to yield 298 K heats of formation for SiFx and SiF+x species. From an evaluation of these and literature values, we recommend the following values: ΔH0f(SiF+) =170.4±2.2 kcal/mol, IP(SiF)=7.54±0.16 eV, ΔH0f (SiF3)=−258±3 kcal/mol, and IP(SiF3)=9.99±0.24 eV.
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 93 (1989), S. 1596-1604 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 96 (1992), S. 10888-10893 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Industrial and engineering chemistry 13 (1974), S. 45-51 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 7855-7867 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Absolute cross sections are measured for the reactions of O2+(X 2Πg) with H2 , D2 , and HD from thermal energies to over 4 eV. The OH++OH, HO2++H, O++H2O, and H2O++O product channels (and the corresponding isotopic analogs) are observed, although H2++O2 is not. While the first three products appear at their thermodynamic thresholds, formation of H2O++O, the least endothermic channel, exhibits a barrier to reaction. In the HD system, the DO2+ product ion is strongly favored over the HO2+ product. Results for internally excited O2+ reactants, probably the a 4Πu state, are also presented. Analysis of the excitation functions, molecular orbital arguments, and statistical kinetic theories are used to understand the mechanisms and dynamics of this reaction. It is shown that the inefficiency of the O+ product channel is due to spin and symmetry constraints. The other three product channels proceed through a long-lived intermediate, but formation of this intermediate from reactants requires surmounting a barrier measured to be 1.1±0.1 eV. The intramolecular isotope effects are shown to be due to statistical and dynamic effects.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 84 (1986), S. 1521-1529 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The endothermic reaction of Al+ with O2 is studied using a guided ion-beam apparatus. The reaction cross section is measured as a function of kinetic energy from 0 to 20 eV. The threshold energy for the reaction, E0, is determined from an empirical model to be 3.64±0.04 eV. Phase space calculations of the cross section performed with E0 as the only adjustable parameter yield a similar result, E0=3.60±0.02 eV, and predict the absolute magnitude of the reaction cross section within experimental error. We conservatively quote the threshold energy as 3.62±0.12 eV which is somewhat higher than the thermodynamic threshold calculated using literature thermochemistry, 3.40±0.16 eV. This may indicate that a slight barrier to the reaction exists, or that AlO+ is produced in an excited state, or that the literature thermochemistry needs revision. Our results suggest D00 (AlO+)≥1.50±0.12 eV and I.P.(AlO)≤9.75±0.13 eV.
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  • 9
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Industrial and engineering chemistry 15 (1976), S. 87-87 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Applied microbiology and biotechnology 30 (1989), S. 89-91 
    ISSN: 1432-0614
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
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