Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
59 (1986), S. 1305-1308
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Heavily phosphorus or gallium-doped silicon was grown by liquid-phase epitaxy and studied by photoluminescence. For the phosphorus-doped samples grown from In(P) solution, recombination of free electrons to compensating In acceptor levels was observed besides the free electron-free hole band-to-band emission. The gallium-doped samples showed a luminescence spectrum similar to the one observed in bulk-doped p-type material, indicating a good crystalline quality and low compensation in these samples. The band-gap shrinkage was found to be larger in heavily gallium-doped than in boron-doped silicon, indicating a dependence of this shrinkage on the chemical nature of the dopant atoms.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.336522
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