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  • 1
    Monograph available for loan
    Monograph available for loan
    Berlin [u.a.] : Springer
    Call number: PIK N 630-11-0178
    Description / Table of Contents: Contents: Part I - The Setting ; 1. An introduction to Chinese plant science ; 2. Landscape and climate ; 3. Native plant distribution ; Part II - Growth Forms: Some Representative Taxa ; 5. Trees ; 6. Shrubs and climbers ; 7. Herbs ; 8. Alpines ; 9. Medical plants and the meeting of two traditions ; Part III - Some Major Genera ; 10. Camellia ; 11. Anemone and Primula ; 12. Rhododendron ; 13. Rosa ; Part IV - Conservation and the Environment ; 14. Chinese plant diversity and its modern literature ; 15. Conservation in practice ; Appendices
    Type of Medium: Monograph available for loan
    Pages: XII, 256 S. : Ill., graph. Darst., Kt.
    ISBN: 3540422579
    Location: A 18 - must be ordered
    Branch Library: PIK Library
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Applied mechanics and materials Vol. 10-12 (Dec. 2007), p. 934-938 
    ISSN: 1662-7482
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: In order to ensure diesel engine operating reliably, need to forecast the performanceparameters of diesel engine. Grey system theory, a method to research poor information anduncertain system, was approached to sequential turbocharged diesel engine. Grey forecast model ofboost pressure of sequential turbocharged diesel engine was established. The precision of theforecast model was inspected by grey relation analysis, it is proved that the model has a goodprecision and is suitable to forecasting boost pressure. The relatively error of the forecast result is2.5%. And it establishes the base for forecasting control and failure prediction of diesel enginesequential turbocharging system
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of organic chemistry 58 (1993), S. 3085-3090 
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6229-6232 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of Mn on structure and magnetic properties of Tb2Fe17−xMnx compounds has been investigated. Substitution of Mn for Fe does not change the structure of Tb2Fe17. All compounds crystallize in the Th2Ni17-type structure. The Curie temperature of Tb2Fe17−xMnx compounds decreases monotonically with increasing Mn content. The saturated magnetic moment and the magnetic moment of the transition metal sublattice of the Tb2Fe17−xMnx compounds decrease with increasing Mn concentration. A point without zero moment similar to the compensation point was observed in the temperature dependence of magnetization for the Tb2Fe17−xMnx compound with x=4.0, which is explained by a three-sublattice model. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1807-1809 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The degradation of non-Ohmic electrical characteristics of ZnO–glass chip varistors due to high-intensity impulse currents was correlated with the deep trap levels investigated by means of deep level transient spectroscopy. Three electron traps located at 0.11, 0.27, and 0.94 eV below the conduction band were observed for chip varistors before current impulse testing. These trap energy depths of the chip varistors after current impulse testing were found to be almost unchanged, but their trap densities and capture cross sections both decreased. The concentration of the trap at 0.94 eV was decreased and ascribed to oxygen vacancies existing at the grain boundaries of the varistor. The electrical degradation phenomenon of the chip varistors is closely related to the reaction between the trap at 0.94 eV and adsorbed oxygen ions at the grain boundaries. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7909-7914 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure and magnetic properties of NdMn2(Ge1−xSix)2 compounds (x=0–1.0) have been investigated. All the compounds crystallize in ThCr2Si2-type structure. Substitution of Si for Ge leads to a linear decrease of the lattice constants and the unit-cell volume. With increasing temperature, for the compounds with x≤0.5, both spin reorientation and ferromagnetic– paramagnetic transition are observed as well at Tr and TC(Mn), respectively. The spin reorientation temperature Tr and the Curie temperature TC(Mn) decrease linearly with Si content from 215 and 339 K at x=0–40 and 306 K at x=0.5, respectively. In compounds with 0.3〈x≤0.5 the ferromagnetic component and the antiferromagnetic component may coexit. For compounds with x≥0.6 the ferromagnetic–antiferromagnetic and the antiferromagnetic–paramagnetic transition are observed and the Curie temperature TC(Nd) decreases monotonically while the Néel temperature TN(Mn) increases monotonically with Si content. A tendentious spin phase diagram has been obtained. The saturation magnetization at 1.5 K decreases first, goes through a minimum at x=0.5, and then increases again. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6898-6902 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure and magnetic properties of SmMn2(Ge1−xSix)2 compounds (x=0–1.0) have been investigated. All the compounds crystallize in ThCr2Si2-type structure. Substitution of Si for Ge leads to a linear decrease of the lattice constants and the unit-cell volume. In all compounds a transition from the ferromagnetic to the antiferromagnetic state is observed at a lower temperature T1, which first decreases, goes through a minimum at x=0.4–0.6, and then increases again with Si concentration. As temperature increases, for the compounds with x〈0.3 both a antiferromagnetic–ferromagnetic transition and the ferromagnetic–paramagnetic transitions are observed as well at T2 and at the Curie temperature Tc, respectively. With increasing Si content the Tc decreases, whereas T2 increases from 140 K for x=0 to 215 K for x=0.2. For compounds with x≥0.3 the antiferromagnetic–paramagnetic transition was observed with increasing temperature and the Néel temperature increases with increasing Si content. The saturation magnetization at 1.5 K decreases first, goes through a minimum at x=0.6, and then increases again with increasing Si content. At room temperature, the saturation magnetization decreases monotonically from 3.27 μB/f.u. for x=0 to nearly zero for x=0.3. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 6762-6766 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By employing a deep level transient spectroscopy (DLTS) technique, this work investigates the deep trap levels of rf-sputtered (Ba0.4Sr0.6)TiO3 (BST) thin films deposited at various temperatures. Arrhenius plots of DLTS spectra detect a single trap located at 0.45 eV in 450 °C deposited films, whereas two traps located at 0.2 and 0.40 eV appear in 550 °C deposited films. On the other hand, examining the I–V characteristics of the films at the temperature range of 298–403 K reveals the presence of two conduction regions in the BST film capacitors, having ohmic behavior at low voltage (〈1 V) and Schottky-emission or Poole–Frenkel mechanism at high voltage (〉6 V). The barrier height and trapped level are, respectively, estimated to be 0.46 and 0.51 eV, corresponding to the trap activation energy 0.4–0.45 eV obtained from our DLTS measurements. Compared with previous published reports, the trap distributed at 0.4–0.5 eV should be an intrinsic defect of BST and possibly ascribed to be oxygen vacancies. Meanwhile, the trap plays a prominent role in the leakage current of BST films. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Journal of plant growth regulation 13 (1994), S. 33-38 
    ISSN: 1435-8107
    Source: Springer Online Journal Archives 1860-2000
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract Hibiscus rosa-sinensis ‘Jane Cowl’ in 1.5–1 pots were given a soil drench of 0.2 mg uniconazole, pruned 2 weeks later, and treated with a foliar application of GA4+7 at 0, 25 (once or four times every 2 weeks), 50 (once or twice every 4 weeks), or 100 mg L-1. One application of GA4+7 at 100 mg L-1, two applications at 50 mg L-1, and four applications at 25 mg L-1 were more active in partially restoring stem elongation and caused nearly normal leaf production than other GA treatments, but promoted the abscission of the lower leaves. The size of the individual leaves, but not stem diameter, increased following GA4+7 application. Multiple applications of GA4+7 stimulated flowering of the retarded plants. Uniconazole resulted in short pedicels bearing short cells with increased diameter, as well as larger pith, vascular, and cortical tissues than the untreated control. Four applications of 25 mg L-1 GA4+7 to uniconazole-treated plants resulted in long pedicels, having long cells similar to the control. Results of the histological study suggest that uniconazole either slowed cell division or caused cell division to cease early.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 353-358 (Sept. 2007), p. 1737-1740 
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The CoNiCrAlY thermal barrier coating was prepared on the surface of TiAl alloy byplasma spraying technique. SEM observation shows that the bonding between thermal barriercoating and substrate is good. The surface hardness of TiAl alloy is improved, the microhardness ofthe coating surface is about 673HV after the oxidation test at 850°C. The oxidation tests at 850°Cshow that the oxidation resistance of the samples is improved remarkably. The surface morphologyand microstructure of the thermal barrier coating are determined by SEM
    Type of Medium: Electronic Resource
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