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  • 1
    Publication Date: 2023-12-16
    Description: 〈title xmlns:mml="http://www.w3.org/1998/Math/MathML"〉Abstract〈/title〉〈p xmlns:mml="http://www.w3.org/1998/Math/MathML" xml:lang="en"〉Three volcanic arcs have been the source of New Zealand's volcanic activity since the Neogene: Northland arc, Coromandel Volcanic Zone (CVZ) and Taupō Volcanic Zone (TVZ). The eruption chronology for the Quaternary, sourced by the TVZ, is well studied and established, whereas the volcanic evolution of the precursor arc systems, like the CVZ (central activity c. 18 to 2 Ma), is poorly known due to limited accessibility to, or identification of, onshore volcanic deposits and their sources. Here, we investigate the marine tephra record of the Neogene, mostly sourced by the CVZ, of cores from IODP Exp. 375 (Sites U1520 and U1526), ODP Leg 181 (Sites 1123, 1124 and 1125), IODP Leg 329 (Site U1371) and DSDP Leg 90 (Site 594) offshore of New Zealand. In total, we identify 306 primary tephra layers in the marine sediments. Multi‐approach age models (e.g. biostratigraphy, zircon ages) are used in combination with geochemical fingerprinting (major and trace element compositions) and the stratigraphic context of each marine tephra layer to establish 168 tie‐lines between marine tephra layers from different holes and sites. Following this approach, we identify 208 explosive volcanic events in the Neogene between c. 17.5 and 2.6 Ma. This is the first comprehensive study of New Zealand's Neogene explosive volcanism established from tephrochronostratigraphic studies, which reveals continuous volcanic activity between c. 12 and 2.6 Ma with an abrupt compositional change at c. 4.5 Ma, potentially associated with the transition from CVZ to TVZ.〈/p〉
    Description: Plain Language Summary: Since 18 Ma, volcanic activity in New Zealand is dominantly sourced by the Coromandel Volcanic Zone (CVZ). Most caldera systems of the CVZ identified so far are located on Coromandel Peninsula in the NW of North Island, New Zealand, but studies of the CVZ are rare mainly due to the limited accessibility of its volcanic deposits, as well as missing stratigraphic continuity between different outcrops and the volcanic source. Here, our ocean drilling tephra record—mainly volcanic ash from explosive eruptions, distributed and falling out over the ocean—has a great potential to reveal the eruption history of the CVZ because it is preserved in marine sediments in a nearly undisturbed stratigraphic context. We analyzed ∼400 marine tephra layers from multiple ocean sediment cores off the coast of New Zealand for their geochemical glass compositions and identified 306 as largely undisturbed ash deposits. These primary ash deposits correspond to a total number of 208 Neogene volcanic events. Different dating methods result in a continuous marine tephra record for the last 12 Ma, equivalent to a unique and most complete eruptive history for the CVZ. This enables us to further unravel changes in the composition of the associated magmas with time.〈/p〉
    Description: Key Points: 〈list list-type="bullet"〉 〈list-item〉 〈p xml:lang="en"〉New Zealand's Neogene explosive volcanism based on the marine tephra record〈/p〉〈/list-item〉 〈list-item〉 〈p xml:lang="en"〉Geochemical fingerprinting of marine tephra layers across the study area to establish volcanic events〈/p〉〈/list-item〉 〈list-item〉 〈p xml:lang="en"〉Insights into geochemical variations with time, repose times and spatiotemporal distribution〈/p〉〈/list-item〉 〈/list〉 〈/p〉
    Description: DFG
    Description: Marsden project
    Description: https://doi.org/10.14379/iodp.proc.372B375.210.2023
    Keywords: ddc:551 ; marine tephrochronostratigraphy ; geochemical fingerprinting ; correlations of marine tephras between individual drill sites ; IODP ; ODP and DSDP drill sites ; neogene eruption record of New Zealand
    Language: English
    Type: doc-type:article
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  • 2
    Publication Date: 2021-07-21
    Description: The Tierra Blanca (TB) eruptive suite comprises the last four major eruptions of Ilopango caldera in El Salvador (≤45 ka), including the youngest Tierra Blanca Joven eruption (TBJ; ∼106 km3): the most voluminous event during the Holocene in Central America. Despite the protracted and productive history of explosive silicic eruptions at Ilopango caldera, many aspects regarding the longevity and the prevailing physicochemical conditions of the underlying magmatic system remain unknown. Zircon 238U‐230Th geochronology of the TB suite (TBJ, TB2, TB3, and TB4) reveals a continuous and overlapping crystallization history among individual eruptions, suggesting persistent melt presence in thermally and compositionally distinct magma reservoirs over the last ca. 80 kyr. The longevity of zircon is in contrast to previously determined crystallization timescales of 〈10 kyr for major mineral phases in TBJ. This dichotomy is explained by a process of rhyolitic melt segregation from a crystal‐rich refractory residue that incorporates zircon, whereas a new generation of major mineral phases crystallized shortly before eruption. Ti‐in‐zircon temperatures and amphibole geothermobarometry suggest that rhyolitic melt was extracted from different storage zones of the magma reservoir as indicated by distinct but synchronous thermochemical zircon histories among the TB suite eruptions. Zircon from TBJ and TB2 suggests magma differentiation within deeper and hotter parts of the reservoir, whereas zircon from TB3 and TB4 instead hints at crystallization in comparatively shallower and cooler domains. The assembly of the voluminous TBJ magma reservoir was also likely enhanced by cannibalization of hydrothermally altered components as suggested by low‐δ18O values in zircon (+4.5 ± 0.3‰).
    Description: Plain Language Summary: The collapse of a volcano edifice into its shallow magma chamber can produce one of the most dangerous single events in nature, known as a caldera‐forming eruption. The TBJ eruption in El Salvador is of this kind and occurred around 1,500 years ago, having a profound impact on Maya societies. Because of this, it is crucial to understand the inner workings of caldera‐forming eruptions to assess volcanic risks and their mitigation. Beneath Ilopango caldera, the micrometer‐sized radioisotopically datable mineral zircon grew within different storage levels of a silica‐rich magma reservoir suggesting continuous melt presence for up to ca. 80,000 years prior to eruption. The time information given by zircon contrasts with that extracted from other, more abundant minerals from the same rocks (〈10,000 years). We explain this time difference between coexisting minerals by the ability of melt to carry along small zircon crystals, whereas coeval, larger, and more abundant minerals are left behind in the partially solidified portion of the magma reservoir. Once the segregated melt coalesced in a shallower and dominantly liquid magma chamber, major minerals resumed crystallization shortly before eruption. In addition, this new magma incorporated parts of older magmatic rocks from preceding volcanic cycles, thus generating even larger magma volumes.
    Description: Key Points: U‐Th zircon ages for the last four explosive eruptions of Ilopango caldera reveal a long‐lived magma reservoir (〉80 kyr). Contrasting residence times for major minerals and zircon suggest extraction of zircon along with evolved melt from crystal residue. Melt extraction from vertically extensive, thermally zoned magma reservoir.
    Description: Deutsche Forschungsgemeinschaft (DFG) http://dx.doi.org/10.13039/501100001659
    Keywords: 549 ; 551.701 ; Central America ; Geochemistry ; Oxygen isotopes ; SIMS ; U‐series ; Zircon
    Type: article
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3634-3636 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The strain distribution of a GexSi1−x/Si strained layer superlattice (SLS) as a function of the distance from the superlattice/substrate interface has been studied by Raman spectroscopy. A small-angle bevel was made by angle lapping on a given thick GexSi1−x/Si SLS so that it is possible to probe the structure at different thicknesses. The Raman spectrum as a function of the distance from interface is then obtained. The results indicate that, as we move away from the substrate interface, the compression strain in the alloy layers decreases while the tensile strain in the Si layers increases. From linewidth measurement of the Raman peaks, it appears that there is an improved crystal quality and a lower concentration of defects going away from the substrate interface.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1046-1048 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Both 1→2 and 1→3 intersubband transitions have been observed in a step quantum well structure consisting of 60 A(ring) GaAs wells, 90 A(ring) Al0.18Ga0.82As steps, and 280 A(ring) Al0.44 Ga0.56As barriers. The transition energy and oscillator strength are 112 meV and 0.23 for the 1→2 transition and 150 meV and 0.15 for the 1→3 transition, respectively. The asymmetric property of a step quantum well allows the normally forbidden 1→3 transition to occur. The relaxation of the selection rule suggests a possibility of using optical pumping for infrared laser applications.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1061-1063 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A SiGe three-terminal hot-hole transistor using a double-barrier resonant tunneling structure as an emitter is fabricated. Injected carriers from the emitter are transferred near-ballistically into the collector through a thin base. The demonstrated main feature of the device is a controllable negative differential resistance in the collector current. Utilizing the high-speed characteristics of the tunneling process and negative differential resistance, integration of the device into Si technology could find applications in the areas of high-speed digital circuits, frequency multipliers, and tunable oscillators/amplifiers.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1253-1255 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The x-ray diffraction technique is used to measure the interdiffusion coefficients of a symmetrically strained Ge/Si superlattice consisting of alternating Ge and Si layers grown on a Ge0.4Si0.6 buffer layer. The buffer layer was 200 nm thick and was grown on a Si (100) substrate in order to symmetrize the strain, and thus maintain pseudomorphic growth of the superlattice. After the sample was annealed at different temperatures with various times, the interdiffusion coefficient Dλ was determined by monitoring the intensity decay of the low-angle x-ray diffraction peak resulting from the superlattice structure. The activation energy is calculated to be 3.1±0.2 eV in the annealing temperature range of 640–780 °C.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4444-4446 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The stability of an amorphous GexSi1−xO2 in contact with an epitaxial (100)GexSi1−x layer obtained by partially oxidizing an epitaxial GexSi1−x layer on a (100)Si substrate in a wet ambient at 700 °C is investigated for x=0.28 and 0.36 upon annealing in vacuum at 900 °C for 3 h, aging in air at room temperature for 5 months, and immersion in water. After annealing at 900 °C, the oxide remains amorphous and the amount of GeO2 in the oxide stays constant, but some small crystalline precipitates with a lattice constant similar to that of the underlying GeSi layer emerge in the oxide very near the interface for both x. Similar precipitates are also observed after aging for both x. The appearance of these precipitates can be explained by the thermodynamic instability of GexSi1−xO2 in contact with GexSi1−x. In water at RT, 90% of GeO2 in the oxide is dissolved for x=0.36, while the oxide remains conserved for x=0.28.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1191-1193 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky barrier heights in the epitaxial (100) CoGa/n-(100) GaAs diodes were studied by the I-V and internal photoemission methods. Diodes of these epitaxial contacts were shown to exhibit good rectifying behaviors and the forward current was found to follow the thermionic emission theory. Using the temperature dependence of the barrier heights, we show that the Schottky barrier heights are about 0.67 eV by I-V and 0.68 eV by internal photoemission measurements. The Schottky barrier height was found to be constant for contacting to n-type GaAs in the temperature range between 150 and 300 K. From this fact, we conclude that the metal Fermi level is pinned relatively to the GaAs conduction band minimum in this case. This finding is similar to other epitaxial contacting cases, CoSi2/Si and ErSi2/Si, where the Fermi level pins to the nearest semiconductor band [J. Y. Duboz, P. A. Badoz, F. Arnaud d'Avitaya, and E. Rosenche, Phys. Rev. B 40, 10 607 (1989)].
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1874-1876 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The perpendicular x-ray strain of epitaxial CoSi2 films grown on Si(111) substrates at ∼600 °C was measured at temperatures from 24 up to 650 °C. At 600 °C, the perpendicular x-ray strain is −0.86%, which is about the x-ray strain that a stress-free CoSi2 film on Si(111) would have at that temperature. This result shows that the stress in the epitaxial CoSi2 film is fully relaxed at the growth temperature. Strains in the film below the growth temperature are induced by the difference in the thermal expansion coefficient of CoSi2 and Si, αf−αs=0.65×10−5/°C. Within experimental error margins, the strain increases linearly with decreasing temperature at a rate of (1.3±0.1)×10−5/C. The slope of the strain-temperature dependence, obtained by assuming that the density of misfit dislocations formed at the growth temperature remains unchanged, agrees with the measured slope if the unknown Poisson ratio of CoSi2 is assumed to be νf=1/3. These observations support three rules postulated for epitaxial growth.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1279-1282 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thick Si1−xGex strained alloy layers grown by molecular beam epitaxy (MBE) are investigated using photoluminescence (PL) spectroscopy. Near-band-edge luminescence with well resolved phonon structures is observed for both as-grown and deuterated samples. The low energy broad band frequently encountered in MBE-grown alloy layers is shown to be annihilated by deuteration, giving rise to the no-phonon and phonon-assisted near-band-edge PL peaks. The broad band recovers by annealing at T≥360 °C while the intensity of the near-band-edge luminescence vanishes. Secondary ion mass spectroscopy and the effect of deuterium passivation are used to help locate and assign the defects responsible for the low PL efficiency of MBE-grown thick SiGe layers.
    Type of Medium: Electronic Resource
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