ISSN:
1432-0630
Keywords:
PACS: 68.55.Jk; 68.60.Bs; 81.15.Hi
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract. The 3D islands of the Stranski–Krastanow system Ge/Si(001) that form either during the annealing of previously flat and nearly strain-relieved Ge films at 1020 K or directly at the Ge deposition at 1020 K are found to be composed of a mixture of Ge and Si, thus pointing to considerable interdiffusion at 1020 K. Direct measurement of the elastic energy unambiguously reveals that neither the 3D islanding nor the Si in-diffusion are driven by the reduction of misfit strain; this strain being the result of increasing configurational entropy.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s003390051035
Permalink