ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
In this study, we performed a statistical analysis of 500 Ni Schottky diodesdistributed across a 2-inch, n-type 4H-SiC wafer with an epilayer grown by chemicalvapor deposition. A majority of the diodes displayed ideal thermionic emission whenunder forward bias, whereas some diodes showed ‘double-barrier’ characteristics witha ‘knee’ in the low-voltage log I vs. V plot. X-ray topography (XRT) and polarizedlight microscopy (PLM) revealed no correlations between screw dislocations andmicropipes and the presence of double-barrier diodes. Depth resolvedcathodoluminescence (DRCLS) indicated that certain deep-level states are associatedwith the observed electrical variations
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.911.pdf
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