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  • 1
    Publication Date: 2019-07-10
    Description: The basic requirements of solar cell modules for space applications are generally described in MIL-S-83576 for the specific needs of the USAF. However, the specifications of solar cells intended for use on space terrestrial applications are not well defined. Therefore, this qualifications test effort was concentrated on critical areas specific to the microseismometer probe which is intended to be included in the Mars microprobe programs. Parameters that were evaluated included performance dependence on: illuminating angles, terrestrial temperatures, lifetime, as well as impact landing conditions. Our qualification efforts were limited to these most critical areas of concern. Most of the tested solar cell modules have met the requirements of the program except the impact tests. Surprisingly, one of the two single PIN 2 x 1 amorphous solar cell modules continued to function even after the 80000G impact tests. The output power parameters, Pout, FF, Isc and Voc, of the single PIN amorphous solar cell module were found to be 3.14 mW, 0.40, 9.98 mA and 0.78 V, respectively. These parameters are good enough to consider the solar module as a possible power source for the microprobe seismometer. Some recommendations were made to improve the usefulness of the amorphous silicon solar cell modules in space terrestrial applications, based on the results obtained from the intensive short term lab test effort.
    Keywords: Solid-State Physics
    Type: Proceedings of the 15th Space Photovoltaic Research and Technology Conference; 257-266; NASA/CP-2004-212735
    Format: application/pdf
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Langmuir 10 (1994), S. 623-625 
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 819-821 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A silicon-on-insulator (SOI) structure was formed by implanting 150 keV O+ ions into a single-crystal n-type Si. The substrate temperature during implantation was maintained at 600 °C. Implanted samples were subsequently annealed in the ambient air at 1350 °C for 70 min using a halogen lamp oven and analyzed using the Rutherford backscattering/channeling technique, cross-sectional electron microscopy, and high-resolution electron microscopy. It is shown that the resulting dislocation density within the top Si layer (105–106/cm2) is two to three orders of magnitude lower than the dislocation density previously reported for the SOI structures implanted under similar conditions and subsequently annealed in an inert gas ambient or under vacuum.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3458-3461 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nondestructive characterization of high-dose oxygen implanted and 1350 °C annealed silicon-on-insulator structures has been performed by spectroscopic ellipsometry. This method provides a fully in-depth profiling (thickness and nature) of the structure including interfaces. Results have been confirmed by other techniques such as cross-sectional transmission electron microscopy and high-resolution Rutherford backscattering spectroscopy.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2013-2015 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep-level transient spectroscopy measurements in InAs quantum dots (QDs) grown in both n-GaAs and p-GaAs show that tunneling is an important mechanism of carrier escape from the dots. The doping level in the barrier strongly affects the tunneling emission rates, enabling or preventing the detection of a transient capacitance signal from a given QD level. The relative intensity of this signal acquired with different rate windows allows the estimation of tunneling emission energies. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 45-47 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A depletion-mode field-effect transistor is used to determine the electrical characteristics of a silicon-on-insulator (SOI) structure such as the Si film doping, the fixed oxide charges, and the interface trapped charges at the Si/SiO2 interfaces. We consider the case of a very thin Si film, i.e., the Si film thickness is smaller than the maximum depletion layer width. The electrical parameters of the SOI structure are derived from drain-source current versus gate voltage and transconductance characteristics, provided that the back Si surface is accumulated by a proper substrate biasing. The device can be of small dimensions and can be used in process control without any extra process step.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 93 (1989), S. 3702-3703 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Colloid & polymer science 266 (1988), S. 849-854 
    ISSN: 1435-1536
    Keywords: Sessile drop ; interfacial tension ; contact angle ; surface tension ; liquids
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The height of a sessile drop of liquid when placed on a smooth solid surface increases as the drop volume increases, until it reaches a limiting value for a very large drop. The magnitude of the height and the contact angle depends on the different physical properties of the system. A large value for the contact angle is often associated with a large value for height and vice versa. From the data of measured limiting height, Z Θ ∞ and contact angle,Θ, the surface or interfacial tension,γ, can be estimated using the following equation: $$\gamma = \Delta \rho \cdot g \cdot (Z_\Theta ^\infty )^2 /2(1 - \cos (\Theta ))$$ whereΔϱ is the density difference between the sessile drop and that of its surrounding medium,g is the gravitational force of acceleration. In this study, the magnitude ofγ of water for various systems is estimated. These values agree with the literature values. Furthermore, the values ofγ for various liquid1/ solid/liquid2 systems agree with data from other methods. Thus, the above equation is valid for different liquid-solid systems. It is further shown that very accurate measurements of contact angle,Θ, can be carried out for systems in which Z Θ Δ ϱ andγ are known. The variation ofΘ with the height and volume of the sessile drop is analyzed for different systems.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Colloid & polymer science 266 (1988), S. 470-474 
    ISSN: 1435-1536
    Keywords: Capillary rise ; surface tension ; liquids
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The capillary rise of liquids was investigated in square capillary tubings of different dimensions (e. g. 300 μm · 300 μm to 1000 μm · 1000 μm) in the temperature range 25° to 35°C. The data were fitted to an equation:γ=1/2 ·Δϱ ·g · (S · (C ·H/2 +C ·S)) whereγ is the surface tension of the liquid,S is the side length of the square tubing,H is the capillary rise,C (= 1.089) is a capillary constant.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Celestial mechanics and dynamical astronomy 26 (1982), S. 265-270 
    ISSN: 1572-9478
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract In non-resonant cases, a constant part coming from the perturbations can be easily separated from the observed mean mean motion, which can be called the perturbed part. An another part created by resonance must be separated from the observed mean motion in the case of the first three Galilean satellites. The determination of it gives better value of the semi-major axis. In this investigation, the analytical process is chosen to avoid a mixture of orders in successive expansions and integrations. The main terms entering in the computation of the libration are the great inequalities of the first three satellites. Each of them is introduced in the development by its eight components; while in Sampson's theory, only the great inequality of Satellite 2 is given by two components. The equations of motion used in this work are derived from Sagnier's theory.
    Type of Medium: Electronic Resource
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