Publication Date:
2016-04-19
Description:
We have fabricated Si-on-insulator (SOI) layers with a thickness h 1 of a few nanometers and examined them by Raman spectroscopy with 363.8 nm excitation. We have found that phonon and electron confinement play important roles in SOI with h 1
Print ISSN:
0021-8979
Electronic ISSN:
1089-7550
Topics:
Physics
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