ISSN:
1432-0630
Keywords:
66.30
;
68.35
;
68.55
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Two kinds of reactively evaporated titanium nitride films with columnar (B 0 films) and fine-grained (B + films) film structures, respectively, have been examined as diffusion barriers for preventing aluminium diffusion. The aluminium diffusion profiles have been investigated by 2 MeV 4He+ Rutherford backscattering spectrometry (RBS) at temperatures up to 550° C. The diffusivity from 300° C to 550° C is: D[m2s−1]=3×10−18 exp[−30/(RT)] in B 0 layers and D[m2s−1]=1.4×10−16 exp[−48/(RT)] in B + TiN layers. The activation-energy values determined indicate a grain boundary diffusion mechanism. The difference between the diffusion values is determined implicitly by the microstructure of the layers. Thus, the porous B 0 layers contain a considerable amount of oxygen absorbed in the intercolumnar voids and distributed throughout the film thickness. As found by AES depth profiling, this oxygen supply allows the formation of Al2O3 during annealing the latter preventing the subsequent diffusion of the aluminium atoms.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00331444
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