ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Metal/n-pyrite (metal=Pt, Au, Nb) Schottky barrier type diodes were fabricated on electrochemically reduced either synthetic or natural (100) and (111) surfaces of single crystalline n-FeS2. The temperature dependence of I-V curves in darkness were analyzed in the range of 200–350 K on the basis of thermionic emission and recombination models. The calculated effective barrier height was ∼0.60 eV and the activation energy for recombination ∼0.50 eV for all investigated n-FeS2/Pt samples. The doping density and the extrapolated potential (pseudo flatband situation) from the Mott–Schottky plot, obtained from capacities deduced from potentiostatic complex impedance measurements, were 2.0×1016 cm−3 and 0.25 eV vs Pt for the synthetic n-pyrite crystal, respectively. From the donor density and barrier height a band bending of 0.5 eV was deduced. Photovoltaic parameters like open-circuit photovoltage and short-circuit photocurrent were studied down to temperatures of 200 K. The main phenomenon preventing the generation of a photopotential approaching the band bending (0.50 eV) appears to be the pinning of the Fermi-level by recombination centers located in the middle of the band gap (Eg=0.95 eV) of pyrite.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.351925
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