ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Magnetotransport measurements are reported for In0.53Ga0.47As layers grown by molecular beam epitaxy (MBE) at different substrate temperatures (Ts) and either δ- or slab-doped with Si. Multiple subband densities deduced from the Fourier analysis of 1.2 K Shubnikov–de Haas measurements are compared with those derived from self-consistent calculations which include nonparabolicity and the doping profile width wSi as a fitting parameter. Significant spreading of the Si donors away from the doping plane is deduced for deposition at Ts≈520 °C, while no measurable migration is inferred for Ts≤470 °C, leading to near-ideal δ-doping behavior. Contrary to previous results [McElhinney et al., J. Cryst. Growth 150, 266 (1995)], no evidence for amphoteric behavior has been found for Si areal densities up to 4×1012 cm−2. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.116105
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