Publication Date:
2014-12-13
Description:
Author(s): M. A. Reshchikov, D. O. Demchenko, A. Usikov, H. Helava, and Yu. Makarov In high-purity GaN grown by hydride vapor phase epitaxy, the commonly observed yellow luminescence (YL) band gives way to a green luminescence (GL) band at high excitation intensity. We propose that the GL band with a maximum at 2.4 eV is caused by transitions of electrons from the conduction band t... [Phys. Rev. B 90, 235203] Published Fri Dec 12, 2014
Keywords:
Semiconductors I: bulk
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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