Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
56 (1990), S. 1245-1247
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Using telegraph noise measurements on small n- and p-channel metal-oxide-silicon field-effect transistors, we have measured the entropy change associated with the change of the charge state of individual slow Si/SiO2 surface states. In n-channel devices we find that the entropy change is positive on electron emission to the silicon conduction band, while in p-channel devices it is positive on hole emission to the valence band. The results suggest that the slow states in the upper and lower regions of the silicon band gap are of a different type.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.102527
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