Electronic Resource
Springer
The European physical journal
207 (1967), S. 322-331
ISSN:
1434-601X
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract A new approach to calculate threshold currents of semiconductor lasers for the model without any k-selection rule ofLasher andStern is presented. For parabolic bands and an active region of given width we derive an explicite threshold current formula, which gives j∼T3 for high temperatures (T〉100 °K) and only small temperature dependence of j for low temperatures. The essential approximation involved is to replace the parabolic state density by a box-like state density of equal total carrier population. The active region is taken at a position, where the gain reaches its maximum value. Applications to GaAs-lasers — especially saturation effects — are discussed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01326346
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