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  • 1
    Electronic Resource
    Electronic Resource
    Effects of laser fluence, size, and shape of the laser focal spot in pulsed laser deposition using a multielemental target (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8132-8142 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two-dimensional distributions of thickness and of composition of the deposit produced by the room temperature pulsed laser ablation of lead zirconate titanate in vacuum were studied experimentally as a function of laser fluence, of size, and of elongation of the rectangular laser focal spot. The flip over and the elliptical shape of the deposit were observed. Increase in laser fluence, increase in elongation, and decrease in size of the spot resulted in a stronger broadening of the thickness profiles. The deposit was lead deficient, with the lead profiles "inverse" to the thickness profiles. Excess and/or nominal content of zirconium and of titanium were observed with the profiles resembling those of the thickness. The thickness profiles were in general formal agreement with the model of adiabatic expansion of the monoelemental plume. An additional broadening of the profiles was ascribed to the spatial distribution of the composition in the deposit. The behavior of the composition was qualitatively analyzed in terms of sorption of ablated species at the substrate. Good agreement between experimental observations and the conclusions of the sorption analysis suggests a determining role of the plume-substrate interaction in the deposition process. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373508
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  • 2
    Electronic Resource
    Electronic Resource
    Dielectric properties of pulsed laser deposited films of PbMg1/3Nb2/3–PbTiO3 and PbSc1/2Nb1/2O3–PbTiO3 relaxor ferroelectrics (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5179-5184 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly oriented perovskite films of PbMg1/3Nb2/3–PbTiO3 and PbSc1/2Nb1/2O3–PbTiO3 with compositions near the morphotropic phase boundary were formed by pulsed laser deposition on La0.5Sr0.5CoO3/MgO (100). The dielectric properties of the films were studied over the frequency range of 100 Hz–1 MHz in the temperature range 20–350 °C. The room temperature polarization and dielectric permittivity of 250-nm-thick films were close to those in bulk ceramics. The films exhibited relaxor-type behavior with thermal hysteresis and with the temperatures of the dielectric peaks corresponding to those in the bulk. The width of the transition in the films was larger than in bulk ceramics. The properties of the films were found to be influenced by the small grain size rather than by the interfaces of the films. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371497
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  • 3
    Electronic Resource
    Electronic Resource
    Sorption in pulsed laser deposition of multicomponent materials: Experiment versus modeling (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2901-2908 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deposition rate, elemental composition, and spatial distribution of both deposition rate and of composition in the deposit were studied experimentally during the room temperature pulsed laser ablation of multicomponent targets of PbZr0.65Ti0.35O3, Bi2Sr2CuO6, and CuInSe2. Different material dependent modes of behavior of the deposition rate, composition, and their spatial distribution were observed with increasing pressure of ambient gas (oxygen, argon). Comparison of the obtained experimental data with the results of the previous modeling of pulsed laser deposition in a gas revealed a number of discrepancies. The possible reason for the discrepancies between the experimental observations and the model predictions was suggested to arise due to an assumption of the unit sticking probability of the species in the modeling. Qualitative phenomenological analysis of the deposition process as a sorption of ablated species on the substrate surface was performed for the studied multicomponent materials with respect to the nature and pressure of ambient gas. Good agreement between the experimental data and the conclusions of such an analysis indicated considerable influence of sorption on the deposition process. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371139
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  • 4
    Electronic Resource
    Electronic Resource
    Pulsed laser deposition of relaxor-based PbLu0.5Nb0.5O3–PbTiO3 thin films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 4274-4281 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric thin films of relaxor-based PbLu0.5Nb0.5O3–PbTiO3 solid solution (PLuNT) with compositions near the morphotropic phase boundary were formed by in situ pulsed laser deposition onto La0.5Sr0.5CoO3/(100)MgO (LSCO/MgO). The phase composition of the PLuNT films was sensitive to the deposition temperature (550–710 °C), with single-phase perovskite formation only at 690 °C. The perovskite PLuNT films were pseudocubic and epitaxial, with (001) planes parallel to the substrate surface. At room temperature, capacitors Au/PLuNT/LSCO exhibited ferroelectric behavior (maximum polarization Pm≅29 μC/cm2, remnant polarization Pr≅14 μC/cm2, coercive field Ec≅70 kV/cm), and zero-field dielectric permittivity about ε≅300–450. A broad peak in ε was observed around 350 °C. With increasing deposition temperature, although the volume fraction of the pyrochlore phase decreased, Pm, Pr, and Ec all decreased, while ε remained unchanged. The suppression of polarization in the capacitors, both compared to that in the PLuNT ceramics and under the variation of the deposition temperature, was explained by the presence and evolution of passive layers near the electrodes. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1290452
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  • 5
    Electronic Resource
    Electronic Resource
    Domain configuration in pulsed laser deposited films of rhombohedral PbZr0.65Ti0.35O3 (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3191-3193 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly oriented perovskite ferroelectric films of rhombohedral PbZr0.65Ti0.35O3, with [001] direction normal to the substrate surface, have been produced by pulsed laser deposition on La0.5Sr0.5CoO3/MgO (100). The domains in the films were detected using atomic force microscopy, registering the electromechanical response of the films in the presence of a low ac field. We observe a direct correlation between domain configuration and the microstructural features in the as-deposited films. In the large (∼200 nm) grains, an ordered polydomain configuration with {100} domain boundaries and "puckering" of the top surface of the grains are observed. The smaller grains are found to be single domain. The observed domain configuration in our films is significantly different from the lamellar pattern reported recently. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124103
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  • 6
    Electronic Resource
    Electronic Resource
    Dielectric nonlinearities in ferroelectric thin-film heterostructures (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 527-529 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of the film–electrode interface on the ac-electric field dependence of the dielectric permittivity in ferroelectric thin-film heterostructures has been studied. The dielectric nonlinearities in epitaxial thin-film heterostructures of ferroelectric PbZr0.65Ti0.35O3 and relaxor ferroelectric (PbMg1/3Nb2/3O3)0.68–(PbTiO3)0.32 were measured at subswitching fields. A dramatic difference between the dielectric nonlinearities possessed by ferroelectric films and those exhibited by the corresponding heterostructures was revealed both by model evaluations and experimental observations. In the heterostructures, due to the presence of an interface layer the dielectric nonlinearities can be considerably suppressed and their type can be changed compared to those in the films. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1342051
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  • 7
    Electronic Resource
    Electronic Resource
    Relaxor behavior of pulsed laser deposited ferroelectric (Pb1−xLax)(Zr0.65Ti0.35)O3 films (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6800-6810 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dielectric behavior of pulsed laser deposited ferroelectric (Pb1−xLax)(Zr0.65Ti0.35)O3 films (PLZT x/65/35, x=0–9.75 at. %) has been studied experimentally. Epitaxial stoichiometric PLZT films were formed on a pulsed laser deposited layer of La0.5Sr0.5CoO3 (LSCO) on MgO (100) single-crystal substrates. The dielectric permittivity and loss tangent of the resulting heterostructures were measured in the temperature range of 20–350 °C at a frequency of 100 Hz–1 MHz. A peak around 130–350 °C was observed in the dielectric permittivity versus temperature curves. The peak exhibited a relaxor type behavior. Its position was a nonmonotonic function of the La content and depended on the microstructure of the film. The broadening of the peak of the dielectric permittivity was larger than that in the ceramic PLZT and it also depended on the La content and microstructure of the film. The broadening depended on the temperature and frequency ranges: master curves of the normalized dielectric permittivity versus normalized temperature were obtained for PLZT films. The results are discussed in terms of the random field theory for relaxor ferroelectrics and the models for finite-size ferroelectrics. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369012
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  • 8
    Electronic Resource
    Electronic Resource
    Experimental studies and modeling of Pb–Zr–Ti–O film growth in pulsed laser deposition (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5489-5496 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth rate and composition of films deposited by laser ablation of Pb(Zr0.65Ti0.35)O3, both in vacuum and in ambient oxygen and argon with laser fluences in the range 0.3–3.0 J/cm2, were studied experimentally with using energy dispersive x-ray analysis. The film growth rate increased in vacuum with an increase in laser fluence and demonstrated two modes of behavior upon adding gas: decreased at low laser fluence and increased nonmonotonously at high laser fluence. Deposition in vacuum resulted in Pb-deficient films with the Pb/Ti ratio decreasing with an increase in laser fluence, while deposition in a gas resulted in a strong increase of Pb content with the Pb/Ti ratio increasing faster under strong laser irradiation. Changes in the film growth rate and composition were similar upon adding either oxygen or argon. No noticeable changes in the spatial distribution of the film growth rate and composition were found in a gas ambient with respect to a vacuum ambient. The obtained experimental results were analyzed using a phenomenological description of the film growth as a sorption of ablated species on the substrate surface and assuming the species retarding in a gas, with respect to vacuum, due to collisions of the species with gas molecules. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367379
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  • 9
    Electronic Resource
    Electronic Resource
    Structural characterization of relaxor ferroelectric PbMg1/3Nb2/3O3-PbTiO3 thin film heterostructures deposited by pulsed laser ablation (2000)
    Springer
    Applied physics 70 (2000), S. 269-274 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 77.84.Dy; 68.55.-a; 77.22.-d
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. Highly oriented and epitaxial films of relaxor ferroelectric PbMg1/3Nb2/3O3-PbTiO3 (PMN-PT) with a composition (68/32) near the morphotropic phase boundary were deposited by pulsed laser ablation on La0.5Sr0.5CoO3 bottom electrodes, deposited on MgO (100) and LaAlO3 (100). The formation of crystalline phases, epitaxy, film–electrode–substrate orientation relationships and crystal perfection were studied by X-ray diffraction and scanning electron microscopy. The structural properties were found to depend on the deposition conditions and substrate. Correlation of both the dielectric and relaxor properties in the heterostructures and the structural properties of the PMN-PT films was observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050046
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  • 10
    Electronic Resource
    Electronic Resource
    Reflection of KrF laser radiation from silicon surfaces with various coatings (1993)
    Springer
    Journal of Russian laser research 14 (1993), S. 421-425 
    Details
    ISSN: 1573-8760
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Conclusion We have measured the coefficients of reflection of KrF-laser radiation from a silicon surface, and also from its coating films SiO2, Al, PSG, and their combinations. We have shown that specular reflection from a silicon surface with various films can vary in intensity not only on account of the change of absorption in the material, but also as a result of scattering of the radiation by the surface waves that are rapidly produced after the silicon melting.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01121884
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