ISSN:
1662-8985
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Optical transitions in the In0.050Ga0.950P0.975N0.025/GaP lattice-matched single quantumwells (SQWs) with different well widths (LZ = 1.6 - 6.4 nm) have been investigated bylow-temperature photoluminescence (PL) and PL-excitation (PLE). PL spectra showed the strongvisible emission from the samples which attracted to a variety of optoelectronic device applicationssuch as light emitting and laser diodes. Comparing to the bulk film, the PL peak position and thefundamental absorption edge of PLE spectra exhibit blue-shift, which is corresponded to the quantumconfinement effect by the well. Comparison between the absorption edge of PLE spectra and the finitesquare well calculation demonstrate that the effective bandgap energy of the InGaPN/GaP system ismight be originated mainly from the N-related localized states
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/40/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.31.224.pdf
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