ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Off-oriented Si (100) substrates had considerable influence on the crystallinity of a (Ca,Sr)F2 layer, which is lattice matched with GaAs and grown on the substrates by molecular beam epitaxy. The (Ca,Sr)F2 layer grown on the Si (100) substrate, off oriented toward 〈011〉, was not a single crystal but had a columnar structure. The (Ca,Sr)F2 layer grown on the exact Si (100) susbstrate, however, was a single crystal in which the crystallinity was quite good with a minimum channeling yield (χmin ) of the mixed fluoride layer in the Rutherford backscattering spectra of about 0.1. To obtain such good crystallinity, the temperature range was limited to around 500 °C. The influence of off-oriented substrates was opposite that found in GaAs/Si (100) structures.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.103242
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