ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We investigate the room-temperature photoluminescence of single In0.1Ga0.9As/Al0.33Ga0.67As quantum wells grown simultaneously on (100), (311)A, and (311)B GaAs substrates. The measurements, taken under both steady state and transient conditions, evidence that nonradiative (Shockley-Read-Hall) recombination dominates the emission of both the [100] and [311]B oriented samples at low injection levels, and is still important up to injection levels approaching those in lasers. The emission of the [311]A oriented sample is, in contrast, dominated by radiative recombination already at modest injection levels. The origin of this remarkable feature of the [311]A oriented sample is traced back to the reduced incorporation of deep recombination centers at the (311)A In0.1Ga0.9As/Al0.33Ga0.67As interface. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.114365
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