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  • 1
    Publication Date: 2023-07-10
    Keywords: 42-380; Abundance estimate; Alnus sp.; Artemisia sp.; Betula sp.; Black Sea; Botryococcus sp.; Carpinus sp.; Carya sp.; Castanea sp.; Castanopsis sp.; Corollina sp.; Corylus sp.; Deep Sea Drilling Project; DEPTH, sediment/rock; DRILL; Drilling/drill rig; DSDP; DSDP/ODP/IODP sample designation; Engelhardtia sp.; Ephedra sp.; Fagus sp.; Fraxinus sp.; Glomar Challenger; Gramineae; Labiatae; Leg42; Myrtaceidites sp.; Parthenocissus sp.; Pediastrum sp.; Picea sp.; Pinus sp.; Pterocarya sp.; Quercus sp.; Salix sp.; Sample code/label; Sciadopitys sp.; SESAME; Southern European Seas: Assessing and Modelling Ecosystem Changes; Sphagnum sp.; Stratigraphy; Taxodiad; Tilia sp.; Tsuga sp.; Typha sp.; Ulmaceae sp.
    Type: Dataset
    Format: text/tab-separated-values, 383 data points
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  • 2
    Publication Date: 2023-07-10
    Keywords: 42-381; Abundance estimate; Alnus sp.; Artemisia sp.; Betula sp.; Black Sea; Botryococcus sp.; Carpinus sp.; Carya sp.; Cedrus sp.; Corollina sp.; Corylus sp.; Deep Sea Drilling Project; DEPTH, sediment/rock; DRILL; Drilling/drill rig; DSDP; DSDP/ODP/IODP sample designation; Engelhardtia sp.; Ephedra sp.; Fagus sp.; Glomar Challenger; Gramineae; Ilex sp.; Leg42; Myrica sp.; Pediastrum sp.; Picea sp.; Pinus sp.; Pterocarya sp.; Quercus sp.; Sample code/label; Schizandra sp.; Sequoia sp.; SESAME; Southern European Seas: Assessing and Modelling Ecosystem Changes; Sphagnum sp.; Stratigraphy; Taxodiad; Tsuga sp.; Typha sp.; Ulmaceae sp.; Umbelliferae
    Type: Dataset
    Format: text/tab-separated-values, 326 data points
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  • 3
    Publication Date: 2023-07-10
    Keywords: 42-379A; Abundance estimate; Alnus sp.; Artemisia sp.; Betula sp.; Black Sea; Botryococcus sp.; Carpinus sp.; Carya sp.; Castanea sp.; Cedrus sp.; Celtis sp.; Corollina sp.; Corylus sp.; Cyperaceae; Deep Sea Drilling Project; DEPTH, sediment/rock; DRILL; Drilling/drill rig; DSDP; DSDP/ODP/IODP sample designation; Engelhardtia sp.; Ephedra sp.; Ericaceae; Fagus sp.; Glomar Challenger; Gramineae; Klukisporites; Leg42; Myrtaceidites sp.; Pediastrum sp.; Picea sp.; Pinus sp.; Pterocarya sp.; Quercus sp.; Sample code/label; Sciadopitys sp.; SESAME; Southern European Seas: Assessing and Modelling Ecosystem Changes; Sphagnum sp.; Tilia sp.; Tsuga sp.; Ulmaceae sp.; Umbelliferae; Vitreisporites sp.; Zelkova sp.
    Type: Dataset
    Format: text/tab-separated-values, 488 data points
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  • 4
    Publication Date: 2023-07-10
    Keywords: 42-380A; Abundance estimate; Alangium sp.; Alnus sp.; Artemisia sp.; Betula sp.; Black Sea; Botryococcus sp.; Carpinus sp.; Carya sp.; Corylus sp.; Cyperaceae; Deep Sea Drilling Project; DEPTH, sediment/rock; DRILL; Drilling/drill rig; DSDP; DSDP/ODP/IODP sample designation; Engelhardtia sp.; Ephedra sp.; Ericaceae; Fagus sp.; Fraxinus sp.; Glomar Challenger; Gramineae; Ilex sp.; Itea sp.; Keteeleria sp.; Leg42; Liquidambar sp.; Myrica sp.; Palmae; Parthenocissus sp.; Pediastrum sp.; Picea sp.; Pinus sp.; Pterocarya sp.; Quercus sp.; Sample code/label; Sciadopitys sp.; Sequoia sp.; SESAME; Southern European Seas: Assessing and Modelling Ecosystem Changes; Sphagnum sp.; Stratigraphy; Taxodiad; Tilia sp.; Tsuga sp.; Typha sp.; Ulmaceae sp.; Umbelliferae; Vitreisporites sp.
    Type: Dataset
    Format: text/tab-separated-values, 727 data points
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  • 5
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 126-128 (Jan. 1993), p. 703-706 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 948-952 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of lutetium silicide layers on 〈100〉 and 〈111〉Si is studied by random and channeling Rutherford backscattering spectrometry, x-ray diffractometry, and scanning electron microscopy. The LuSi2−x layers grow epitaxially with a better crystallinity on 〈100〉Si than on 〈111〉Si by vacuum annealing at 400 °C. Silicidation of Lu layers proceeds via nonuniform spatial diffusion of silicon atoms leading to a columnar growth of the silicide layer. Resistivity measurements in the temperature range 4.6–300 K show that LuSi2−x layers are metallic.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Industrial & engineering chemistry research 32 (1993), S. 1801-1804 
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3774-3776 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diffusion induced by 4 MeV Au++ irradiation at room temperature, normal and parallel to the substrate surface, has been studied on samples formed by a Ni film (the Ni island) which partially covers a Si film. Normal diffusion, monitored by Rutherford backscattering spectroscopy, is in agreement with previous results obtained on Ni films deposited on Si wafers. A noticeable spread of the edge of the Ni island along the lateral direction, that increases with irradiation fluence, was observed by transmission electron microscopy. When diffusion is thermally induced, the lateral diffusion length was found to be of the same order of magnitude as the normal one. However, under ion irradiation, the lateral diffusion length is two orders of magnitude larger than the normal diffusion. Electron diffraction patterns reveal the existence of mainly Ni2Si and Ni3Si2 in the layer formed along the lateral direction. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Titanium disilicide is formed by thermal annealing of amorphous Si/Ti multilayers, deposited on monocrystalline silicon by alternate electron-gun evaporation of Si and Ti. The bilayer periodicity was equal to 4. The bilayer Si/Ti thickness ratio was varied between 2 and 3 and its influence on the film properties (stoichiometry, surface and interface roughness and resistivity) was studied and compared to the properties of a silicide of the same thickness, formed by annealing of a single deposited Ti layer on monocrystalline silicon. The characterization techniques used are: x-ray-diffraction, Rutherford backscattering, scanning electron microscopy, surface profilometry, and electrical measurements. The reaction rate of deposited Ti with monocrystalline silicon for the formation of TiSi2 is also compared in a special experiment to that of deposited Ti with amorphous Si (α-Si).
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6329-6335 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Granular Co/AlN multilayers, with Co thicknesses varying from 0.2 to 3 nm, were prepared by sputtering. The goal was to prepare Co clusters embedded in a ceramic matrix and to study their magnetic properties. The local surrounding of the Co atoms was characterized via x-ray absorption spectroscopy. The magnetic properties were found to depend markedly on the Co thickness. The findings can be explained in terms of strong chemical interaction between Co and AlN. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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