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  • 1
    Electronic Resource
    Electronic Resource
    Optical third-harmonic generation from poly-(2,5-dimethoxy p-phenylene vinylene) thin film (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1619-1621 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Third-harmonic generation has been measured in poly(2,5-dimethoxy p-phenylene vinylene) thin film. The third-order optical susceptibility, χ(3), was evaluated to be 5.4×10−11 esu at 1.85 μm wavelength. This χ(3) value is about one order higher than that for poly(p-phenylene vinylene) and almost the same value as for poly(n-BCMU diacetylene) which possesses the highest χ(3) value among processible (solvent castable) polymeric materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101393
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  • 2
    Electronic Resource
    Electronic Resource
    Organic/inorganic superlattices with ordered organic layers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1985-1989 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superlattices consisting of alternating layers of organic and inorganic materials have been fabricated from 3,4,9,10-perylenetetracarboxylic diimide (PTCDI), copper phthalocyanine (CuPc), and MgF2 by molecular-beam deposition. From the small-angle x-ray diffraction patterns of PTCDI/MgF2 and CuPc/MgF2 superlattices, a periodically layered structure is confirmed through the entire stack. The PTCDI layers in the PTCDI/MgF2 superlattices have a high degree of structural ordering, in which molecular planes are nearly parallel to the substrate surface. On the other hand, the CuPc/MgF2 superlattices have a poorly ordered structure in the CuPc layers. It is found that the optical absorption spectra of these superlattices are different from those of organic single films and significantly change with varying organic layer thickness. Such spectral changes can be interpreted by the effect of the aggregate size and the coexistence of two different crystal forms. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358834
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  • 3
    Electronic Resource
    Electronic Resource
    Microcavity organic light-emitting diodes for strongly directed pure red, green, and blue emissions (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2407-2411 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article we demonstrate strongly directed pure red, green, and blue emissions in the organic light-emitting diodes (OLEDs) with a planar microcavity defined by a pair of dielectric mirror and a metal mirror. By careful control of the cavity mode and the position of the resonance wavelength, the strong directionality in the forward direction as well as the spectral narrowing and the intensity enhancement are realized in the microcavity OLEDs. The intensity enhancements at the resonance wavelength are 1.5–5 compared to the noncavity OLEDs, and the chromaticity coordinates of the emission colors are the ideal primary colors. The experimental results are compared to theoretically calculated ones. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371068
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  • 4
    Electronic Resource
    Electronic Resource
    Highly efficient phosphorescence from organic light-emitting devices with an exciton-block layer (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 156-158 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: One of the keys to highly efficient phosphorescent emission in organic light-emitting devices is to confine triplet excitons generated within the emitting layer. We employ "starburst" perfluorinated phenylenes (C60F42) as a both hole- and exciton-block layer, and a hole-transport material 4,4′,4″-tri(N-carbazolyl) triphenylamine as a host for the phosphorescent dopant dye in the emitting layer. A maximum external quantum efficiency reaches to 19.2%, and keeps over 15% even at high current densities of 10–20 mA/cm2, providing several times the brightness of fluorescent tubes for lighting. The onset voltage of the electroluminescence is as low as 2.4 V and the peak power efficiency is 70–72 lm/W, promising for low-power display devices. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1385182
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  • 5
    Electronic Resource
    Electronic Resource
    Highly efficient blue-green emission from organic light-emitting diodes using dibenzochrysene derivatives (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 160-162 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated highly efficient organic light-emitting diodes (OLEDs) using new hole-transporting emissive materials based on dibenzochrysene. Hole drift mobilities of the dibenzochrysene derivatives were measured in the vacuum-deposited films and found to be 5×10−4–2×10−3 cm2/V s (at 5×105 V/cm). The OLEDs consist of an emitting layer of the dibenzochrysene derivative and an electron-transport layer of tris(8-quinolinolato) aluminum. Emission colors of the OLEDs were blue-green and their spectra were consistent with the photoluminescence spectra with a peak wavelength of 490 nm. High external quantum efficiency of 2% was obtained at a luminance of 300 cd/m2, and good durability in a continuous operation at room temperature and high temperatures was achieved. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126910
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  • 6
    Electronic Resource
    Electronic Resource
    Highly efficient pure blue electroluminescence from polyfluorene: Influence of the molecular weight distribution on the aggregation tendency (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2502-2504 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A dependency between the molecular weight distribution of polyfluorene (PFO) and its aggregation tendency on operation in organic light-emitting devices (OLED) is described. As a result of these findings, low molecular parts of the polymer could be made responsible for the aggregation in liquid crystalline PFO. Consequently, a procedure was developed which leads to PFO-based OLEDs which do not show aggregation on operation anymore but exhibit highly efficient and stable blue electroluminescence. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126389
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  • 7
    Electronic Resource
    Electronic Resource
    Thermal stability in oligomeric triphenylamine/tris(8-quinolinolato) aluminum electroluminescent devices (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1929-1931 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal stability of the electroluminescent (EL) devices using various hole-transporting materials based on triphenylamine, and a typical emitting material, tris(8-quinolinolato) aluminum has been systematically studied. The thermal stability of the EL devices is clearly seen to depend on the glass transition temperature (Tg) of the hole-transporting material. The highest thermal stability up to 155 °C is obtained in the device using the pentamer of triphenylamine. It has been found that the linear linkage of triphenylamine is useful to attain high Tg rather than the branch linkage. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118782
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  • 8
    Electronic Resource
    Electronic Resource
    High-temperature operation of an electroluminescent device fabricated using a novel triphenylamine derivative (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 878-880 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated thermally stable organic electroluminescent (EL) devices using a hole transporting material, a tetramer of triphenylamine, and a typical emitting material, tris (8-quinolinolato) aluminum (Alq). The organic EL devices show uniform light emission in a continuous operation up to 140 °C without breakdown. A lowering of turn-on voltage for light emission and an increase of luminous efficiency with increasing temperature are found; the significantly low turn-on voltage of 2.1 V and the high luminous efficiency of 1.25 lm/W are obtained at 130 °C. Excellent durability of continuous operation is also achieved at the high temperature. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117974
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  • 9
    Electronic Resource
    Electronic Resource
    Optical third-harmonic generation from poly(2,5-thienylene vinylene) thin films (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2002-2004 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Third-harmonic generation measurements have been made on poly(2,5-thienylene vinylene) (PTV) thin films. The third-order optical susceptibility χ(3) was evaluated to be 3.2×10−11 esu at 1.85 μm wavelength. It was also revealed that in weakly iodine-doped PTV thin films, χ(3) was almost the same value as that of nondoped films. χ(3) at a shorter wavelength region was expected to be much higher than that obtained in this work due to the resonant effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100416
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  • 10
    Electronic Resource
    Electronic Resource
    Electrical properties of Ta–Sn–O films on indium tin oxide electrodes (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 270-272 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have found that Ta–Sn–O films prepared on indium tin oxide (ITO) electrodes by magnetron cosputtering of Ta2O5 and SnO2 have much higher breakdown field strength than the Ta2O5 films on the ITO electrodes. The highly insulating Ta–Sn–O films were obtained in the Sn concentration range of 3–40 at. %. The figure of merit, which was defined by the multiplication of the breakdown field strength by the relative dielectric constant, of the Ta–Sn–O films was found to become a maximum in the Sn concentration of about 3 at. %. The experimental results of temperature dependence of the leakage currents indicated that the conduction mechanisms at room temperature changed from Poole–Frenkel type to Fowler–Nordheim tunneling type by adding SnO2 into Ta2O5 films. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118360
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