ISSN:
1572-9486
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract Direct formation of InGaAs/GaAs quantum dots is studied comparatively by Reflection High Energy Electron Diffraction, Scanning Tunneling Microscopy and Photoluminescence methods. It is found that submonolayer migration enhanced epitaxy growth mode allows a reduction in the dispersion of quantum dots size distribution as compared to submonolayer molecular beam epitaxy. In situ and ex situ results obtained are in agreement with each other and give a conceptual kinetic picture of the growth processes during epitaxy from molecular beams.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1021294719812
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