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  • 1
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Magnesium diboride, MgB2, has a relatively high superconducting transition temperature, placing it between the families of low- and high-temperature (copper oxide based) superconductors. Supercurrent flow in MgB2 is unhindered by grain boundaries, making it potentially ...
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 627-632 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamics of carrier recombination in proton bombarded high-quality single crystal thin films of InAs grown by molecular beam epitaxy on transparent GaAs substrates are studied using the picosecond pump-probe technique in the photon energy range 335–483 meV. The effects of extrinsic recombination at the InAs/GaAs interface and of point defects introduced by proton damaging are separated by studying samples ranging from 3.3 to 0.27 μm in thickness and with proton doses in the range 1011–1015 cm−2. The data indicate an interfacial recombination velocity of 2.7×104 cm s−1 and a defect capture time of 160 ps, and in the regime studied mobility limitations are found to have a negligible effect on the recombination dynamics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 344-352 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A thin-film sample of YBa2Cu3O7−δ on MgO was irradiated at room temperature with 50-keV 2H+ (deuterium) to a dose of 1×1016 ions cm−2. The film was mainly c-axis textured film, ∼360–420 nm thick, deposited by sputtering on 〈100〉 MgO substrate. The as-implanted sample was divided into several pieces and annealed in a flowing oxygen ambient using (i) a rapid thermal annealing oven, at various temperatures between 450 and 940 °C, and (ii) a conventional annealing furnace, at various temperatures between 100 and 350 °C. Analysis by secondary-ion mass spectroscopy shows that the implanted 2H is a fast diffuser in the 123 phase. The apparent activation temperature (energy) for 2H release from the initial traps within the YBCO film during the anneal is estimated to be ∼175 °C (∼0.97 eV), which is obviously lower than the apparent activation temperature (energy) for 2H release from the initial traps within the MgO substrate (∼550 °C, i.e., ∼1.78 eV). At 200 °C the diffusivity of 2H in the YBCO film is estimated to be ∼1.4×10−13 cm2/s. In the irradiated MgO, during the anneal the migration and release of 2H is thought to be radiation enhanced around the higher damage region. No diffusional broadening or diffusion tail toward the deeply undamaged region was observed. © 1995 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 82-85 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Device grade 〈100〉 single crystal silicon wafers have been implanted with 40 keV oxygen ions (16O+) over the dose range of 1×1017–8×1017/cm2 at a temperature of 550±10 °C. Transmission electron microscopy, ion channeling, and secondary ion mass spectroscopy studies show that during implantation the critical dose required to form a buried oxygen-rich amorphous (SiOx, x〈2) layer is lower than 1×1017 O+/cm2. As the dose increases from 1×1017 to 4×1017/cm2 the thickness of the buried SiOx layer increases and there is a corresponding decrease in the thickness of the single crystal silicon top layer, with the oxygen concentration and residual radiation damage playing important roles in determining its position and thickness. A dose of 5×1017/cm2 results in a continuous surface amorphous layer, with a buried SiO2 sublayer being formed in the region corresponding to the implanted oxygen peak. With further increasing dose, the buried SiO2 sublayer grows primarily towards the surface. The results for the sample implanted at a dose of 1×1017/cm2 show that surface defects can be attributed to agglomeration of interstitial silicon atoms created by the internal oxidation process.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4081-4084 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A c-axis oriented YBa2Cu3O7−δ film, 180–230 nm thick, deposited onto 〈100〉 LaAlO3 by dc sputtering was irradiated at room temperature with 50 keV 2H+ (deuterium) ions to a dose of 1×1016 cm−2. Secondary-ion-mass spectroscopy analysis shows that after implantation the implanted 2H is trapped in both the film and the substrate. For example, when the thickness of the YBCO film is equal to ∼180 nm, it contains about 4.5% of the retained dose. The as-implanted 2H distribution is essentially Gaussian-like and the depth (Rˆp) of maximum 2H concentration is ∼485 nm. It is obvious that the target crystallinity has to be taken into account for the range data, since the experiment values (Rˆp,R¯p, and ΔRp) are obviously larger than the corresponding values from the transport of ions in matter code. This implantation makes the YBa2Cu3O7−δ film more granular. Within the irradiated LaAlO3 substrate, a damaged band was observed by cross-sectional transmission electron microscopy, which was centered at about 85% of Rˆp(exp).
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3509-3511 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion implantation is a possible technique to introduce electrochromically active dopants into fine-grained WO3 thin films. However, to be of use, we must be able to distinguish, and erase, effects due to collisional damage. Argon implants were performed in order to investigate damage effects. Pure damage was found to cause oxygen deficiency, leading to a broadband grey coloration. The formation of hydrogen bronzes (due to water vapor absorption), and of grain-grown material, are reported. Beam heating effects were found to be important due to the fine-grained nature of the material, and need to be suppressed in order for ion implantation to be a useful technique in this area.
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    Bulletin of environmental contamination and toxicology 50 (1993), S. 554-560 
    ISSN: 1432-0800
    Source: Springer Online Journal Archives 1860-2000
    Topics: Energy, Environment Protection, Nuclear Power Engineering , Medicine
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Bulletin of environmental contamination and toxicology 51 (1993), S. 703-709 
    ISSN: 1432-0800
    Source: Springer Online Journal Archives 1860-2000
    Topics: Energy, Environment Protection, Nuclear Power Engineering , Medicine
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  • 9
    Electronic Resource
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    Springer
    Bulletin of environmental contamination and toxicology 64 (2000), S. 258-262 
    ISSN: 1432-0800
    Source: Springer Online Journal Archives 1860-2000
    Topics: Energy, Environment Protection, Nuclear Power Engineering , Medicine
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  • 10
    Electronic Resource
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    Springer
    Archives of environmental contamination and toxicology 33 (1997), S. 286-289 
    ISSN: 1432-0703
    Source: Springer Online Journal Archives 1860-2000
    Topics: Energy, Environment Protection, Nuclear Power Engineering , Medicine
    Notes: Abstract. Glyphosate (Roundup) is one of the most commonly used broad-spectrum herbicides with little to no hazard to animals, man, or the environment. Due to its widespread use, there is continuous contamination of the environment in both soil and water with this herbicide. There is a paucity of long-term exposure studies with sublethal concentrations of glyphosate on aquatic snails. This study was developed to determine the effects of sublethal concentrations of glyphosate on development and survival of Pseudosuccinea columella (intermediate snail host of Fasciola hepatica). This was assessed by continuously exposing three successive generations of snails to varying concentrations (0.1–10 mg/L) of glyphosate. Glyphosate had little effect on the first- and second-generation snails. However, third-generation snail embryos exposed to 1.0 mg/L glyphosate developed much faster than other embryos exposed to 0.1 mg/L, 10 mg/L, and 0 mg/L (control). Hatching was inhibited at 10 mg/L and inhibited slightly at 0.1 mg/L. The egg-laying capacity was increased in snails exposed to 0.1 and 10 mg/L. Abnormalities and polyembryony were observed in snails exposed to 0.1 and 10 mg/L. These results indicate that glyphosate does affect snail reproduction and development. This, in turn, could possibly have an effect on the population dynamics of F. hepatica, which could result in increased infections in animals, including man.
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