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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1171-1173 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of two different dopants, P and Ga, in spin-on glass (SOG) films on impurity-free vacancy disordering (IFVD) in GaAs/AlGaAs quantum-well structures has been investigated. It is observed that by varying the annealing and baking temperatures, P-doped SOG films created a similar amount of intermixing as the undoped SOG films. This is different from the results of other studies of P-doped SiO2 and is ascribed to the low doping concentration of P, indicating that the doping concentration of P in the SiO2 layer is one of the key parameters that may control intermixing. On the other hand, for all the samples encapsulated with Ga-doped SOG layers, significant suppression of the intermixing was observed, making them very promising candidates with which to achieve the selective-area defect engineering that is required for any successful application of IFVD. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 10-12 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single high-energy (0.9 MeV) proton implantation and rapid thermal annealing was used to tune the spectral response of the quantum-well infrared photodetectors (QWIPs). In addition to the large redshift of the QWIPs' response wavelength after implantation, either narrowed or broadened spectrum was obtained at different interdiffusion extent. In general, the overall device performance for the low-dose implantation was not significantly degraded. In comparison with the other implantation schemes, this single high-energy implantation is the most effective and simple technique in tuning the wavelength of QWIPs, thus, to achieve the fabrication of multicolor detectors. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1437-1439 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Arsenic ion implantation with thermal annealing was used to shorten the response times of GaAs-based saturable absorber structures. Ultrafast absorption bleaching measurements indicated that the recovery time was decreased with increasing the implantation dose. However, above a certain dose the recovery time increased again. This behavior was correlated with the microstructure of the residual implantation defects. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2680-2682 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Proton irradiation followed by rapid thermal annealing was used to selectively induce layer intermixing and thus shift the emission wavelengths of GaAs–AlGaAs graded-index separate-confinement-heterostructure quantum well lasers. Up to 40 nm shifts were observed in 4 μm ridge waveguide devices irradiated to a dose of 1.5×1016 cm−2. Although the wavelength shifts were accompanied by some degradation in the lasing threshold current and differential quantum efficiency, they were still quite acceptable at moderate wavelength shifts. This technique provides a simple and promising postgrowth process of integrating lasers of different wavelengths for wavelength-division-multiplexing applications. © 1997 American Institute of Physics.
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  • 5
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonstoichiometric GaAs obtained by implantation with 2 MeV arsenic ions at 1015 cm−2 dose is studied. As-implanted samples show a 〈200 fs lifetime of photocarriers and low resistivity due to hopping, with mobility less than 1 cm2/V s. Annealing of the samples at 600 °C leads to substantial recovery of postimplant damage, as seen from Rutherford backscattering channeling spectra and mobility increase to about 2000 cm2/V s, but photocarrier lifetime is still about 1 ps. These parameters are similar to those of low-temperature GaAs annealed at 600 °C, and make arsenic implanted GaAs an interesting material for optoelectronic applications. © 1995 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1481-1487 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels and carrier compensation created in undoped metal-organic chemical-vapor deposition grown GaAs by low fluence proton irradiation (1×108−1×1010 cm−2) are investigated by the deep level transient spectroscopy technique and capacitance-voltage profiling. At least five main electron traps are observed after room-temperature irradiation in addition to the EL2 present in the as-grown material. Irradiation generates additional EL2, which annihilate at much lower temperatures than one would expect for isolated EL2. However, with further increase in irradiation fluence, the magnitude for this additional increment begin to decrease. The apparent decrease in the EL2 peak is accompanied by an increase of a broad peak in the deep level transient spectroscopic spectrum. This broad peak has a highly nonexponential capacitance transient and it is suggested to result from the interaction of the additional EL2 with EL6. One of the observed traps, with energy level, (Ec−0.40) eV, has not previously been reported in proton irradiated GaAs. The signature of this trap resembles that of EL5 and is quite stable at moderate annealing temperatures; annihilating completely only at a temperature of ∼600 °C. This level shows a saturation effect with increasing irradiation dose and we believe it is related to complex defect-impurity formation. The temperature dependence of the carrier profiles reveals some complex behavior of carrier compensation, including acceptor- and donor-like properties of the various traps. © 1995 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of fish biology 57 (2000), S. 0 
    ISSN: 1095-8649
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Encheloclarias velatus sp. nov. is described from central Sumatra. It diers from its congeners in having confluent anal- and caudal-fin bases, number of anal-fin rays, number of caudal vertebrae, length of anal-fin base, body depth at anus, head length, snout length, and interorbital distance.
    Type of Medium: Electronic Resource
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  • 8
    Publication Date: 2013-08-31
    Description: A technique for maintaining synchronization between optical PPM (pulse-position modulation) pulses and a receiver clock by means of a delay-tracking loop is described and analyzed. The tracking loop is driven by a doubly stochastic Poisson process that contains information about the location of the desired slot boundaries. The slot boundaries are subject to slowly varying random delays that are ultimately tracked by the loop. The concept of fractional rms delay error is introduced to quantify the effects of signal and background induced shot noise on the performance of the delay-tracking loop.
    Keywords: COMMUNICATIONS AND RADAR
    Type: The Telecommunications and Data Acquisition Report; p 24-31
    Format: application/pdf
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7964-7966 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of ion implantation-induced interdiffusion on the resonant wavelength of GaAs/AlxOy distributed Bragg reflectors is investigated. As interdiffusion becomes stronger, the resonant wavelength is seen to redshift. Shifts of more than 60 nm could be achieved for center wavelengths around 800 nm. A model is proposed to explain this behavior. This model agrees well with previous lateral oxidation studies. © 1999 American Institute of Physics.
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  • 10
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Proton irradiation with subsequent rapid thermal annealing was used to investigate intermixing of InGaAs/GaAs and InGaAs/AlGaAs quantum wells. Large photoluminescence (PL) energy shifts were observed in both materials. Comparatively, InGaAs/AlGaAs samples showed larger PL energy shifts than InGaAs/GaAs samples because of the presence of Al in the barriers and also better recovery of PL intensities, which is mainly due to dynamic annealing effects in AlGaAs during irradiation. Based on this, InGaAs/AlGaAs quantum-well lasers were fabricated and up to 49.3-nm-emission wavelength shift was observed in the proton-irradiated laser with no significant degradation in device characteristics. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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