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  • 1
    Electronic Resource
    Electronic Resource
    Control of interfacial morphology: NiSi2/Si(100) (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 478-489 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure and morphology of thin and ultrathin epitaxial NiSi2 layers on Si(100) grown by various techniques have been studied in detail. Very high-quality single-crystal NiSi2 layers have been grown on Si(100). Codeposition of stoichiometric NiSi2 at low temperatures followed by subsequent annealing at high temperatures (≥700 °C) has been shown to eliminate the most common problem for this epitaxial system, namely, faceting at the interface. Line defects, associated with interface roughness, were also greatly reduced in films grown by this method. Interfacial faceting and defects at interface domain boundaries appear to be related to the growth kinetics and are not due to energetic advantages, as previously thought. Discrete spots around the (01/2 1/2)-related reflections were observed by transmission electron diffraction from some planar NiSi2 layers, suggesting the existence of superstructures at portions of the NiSi2/Si interface. Low-energy electron diffraction indicated the existence of a highly ordered surface reconstruction for well-annealed films. Possible growth models, as well as the implications of possible structural inhomogeneity on interface electron transport measurements, are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351878
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  • 2
    Electronic Resource
    Electronic Resource
    Inhomogeneous Schottky barriers at Ag/Si(111) and Ag/Si(100) interfaces (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7820-7829 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured current–voltage and capacitance–voltage characteristics of epitaxial Si(111)7×7–Ag, Si(111)((square root of)3×(square root of)3)R30°–Ag, Si(100)2×1–Ag, and polycrystalline Ag/Si interfaces, using different doping levels for both n- and p-type silicon wafers. Our data strongly suggest that the Schottky barrier heights (SBHs) are spatially nonuniform. The distribution of local effective SBHs at the epitaxial interfaces is modeled by a summation of a single Gaussian, representing the spread in SBH for the majority of the contact, and two half-Gaussians which represent the high- and low-barrier tails of the full distribution. Despite the fact that the average SBHs of the epitaxial interfaces are hardly structure dependent, the SBH distributions are very broad and markedly different for each interface. The polycrystalline interfaces are characterized by a narrower SBH distribution centered at a substantially smaller mean. We argue that the electrical inhomogeneity is related to structural inhomogeneity at the interface which is a direct consequence of the kinetics and mode of growth of Ag on Si. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362390
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  • 3
    Electronic Resource
    Electronic Resource
    Single-crystal Si/NiSi2/Si(100) structures (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8250-8257 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality, uniform, Si/NiSi2/Si(100) structures were demonstrated by a combination of molecular-beam epitaxy and postgrowth, high-temperature annealing. A Si template technique ensures the epitaxial orientation of the Si overlayer. The unusual inverse Volmer–Weber mode observed during the growth of Si on NiSi2(100) is shown to be a result of interface and surface energetics. The evolution of the interface morphology of the double-heteroepitaxial structures is discussed in terms of thermodynamics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353443
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  • 4
    Electronic Resource
    Electronic Resource
    Interfacial defects in silicides on Si(100): "Coreless defects,'' 1/12〈111〉 dislocations, and twinning mechanisms (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4064-4066 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: "Coreless defects'' are one of the long-standing surprises of silicide epitaxy on Si. For symmetry reasons a NiSi2 or CoSi2 film cannot grow over a step on Si(100), but must incorporate a dislocation; apparently, however, very thin films avoided this dislocation by introducing a trench through the silicide, the coreless defect. Here we use high-resolution microscopy, electron diffraction and dark-field imaging to show that these defects are in fact microtwins ≈4 atomic planes thick. The twins are highly unusual in that they follow curved lines, apparently dictated by steps at the interface. A mechanism for the formation of these curved twin defects by repeated formation of a 1/12〈111〉 interfacial partial at steps is postulated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352829
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  • 5
    Electronic Resource
    Electronic Resource
    Electron transport of inhomogeneous Schottky barriers: A numerical study (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7403-7424 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Numerical simulations are presented of the potential distribution and current transport associated with metal-semiconductor (MS) contacts in which the Schottky barrier height (SBH) varies spatially. It is shown that the current across the MS contact may be greatly influenced by the existence of SBH inhomogeneity. Numerical simulations indicate that regions of low SBH are often pinched-off when the size of these regions is less than the average depletion width. Saddle points in the potential contours in close proximity to the low-SBH regions, which are shown to vary with the dimension and magnitude of the inhomogeneity as well as with bias, essentially determine the electron transport across the low-SBH regions. It is these dependences of the saddle point which give rise to various abnormal behaviors frequently observed from SBH experiments, such as ideality factors greater than unity, various temperature dependences of the ideality factor, including the T0 anomaly, and reverse characteristics which are strongly bias-dependent. The results of these numerical simulations are shown to support the predictions of a recently developed analytic theory of SBH inhomogeneity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349737
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  • 6
    Electronic Resource
    Electronic Resource
    Thick stress-free amorphous-tetrahedral carbon films with hardness near that of diamond (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3820-3822 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a process for making thick, stress-free, amorphous-tetrahedrally bonded carbon (a-tC) films with hardness and stiffness near that of diamond. Using pulsed-laser deposition, thin a-tC films (0.1–0.2 μm) were deposited at room temperature. The intrinsic stress in these films (6–8 GPa) was relieved by a short (2 min) anneal at 600 °C. Raman and electron energy-loss spectra from single-layer annealed specimens show only subtle changes from as-grown films. Subsequent deposition and annealing steps were used to build up thick layers. Films up to 1.2 μm thick have been grown that are adherent to the substrate and have low residual compressive stress (〈0.2 GPa). The values of hardness and modulus determined directly from an Oliver–Pharr analysis of nanoindentation experimental data were 80.2 and 552 GPa, respectively. We used finite-element modeling of the experimental nanoindentation curves to separate the "intrinsic" film response from the measured substrate/film response. We found a hardness of 88 GPa and Young's modulus of 1100 GPa. From these fits, a lower bound on the compressive yield stress of diamond (∼100 GPa) was determined. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120515
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  • 7
    Electronic Resource
    Electronic Resource
    Characterization of electron emission from planar amorphous carbon thin films using in situ scanning electron microscopy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1995-1997 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron emission characteristics combined with in situ scanning electron microscope images have been measured on a series of amorphous carbon films grown by pulsed laser deposition. Uniform, reproducible current–voltage characteristics without morphological damage are only observed with sequential voltage ramps ≤5 V/s for anode-cathode gaps of 10–200 μm. The field threshold and emission barrier increase with laser energy density used during film growth. This dependence of emission parameters on film growth conditions appears to be correlated with the presence of conducting filaments extending through the film thickness. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119078
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  • 8
    Electronic Resource
    Electronic Resource
    Pitfalls in the measurement of metal/p-Si contacts: The effect of hydrogen passivation (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2804-2806 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Chemical etching of Si, used in the preparation of clean, hydrogen-terminated Si surfaces, was found to inject hydrogen—leading to the passivation of acceptors at depths over 0.5 μm. This effect explains the "high'' barrier heights, the nonlinear capacitance-voltage plots, and the nonuniform dopant profiles observed for metals deposited on unannealed, etched p-type substrates. Room-temperature metal deposition on atomically clean, well-annealed p-type substrates showed no changes in the active dopant profile, in disagreement with metal-acceptor complex mechanisms recently proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109215
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  • 9
    Electronic Resource
    Electronic Resource
    Reaction and stability of metal/silicide interfaces: Ti/MoSi2 (001) (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 671-673 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal/single-crystal-silicide interface evolution has been examined for Ti/MoSi2 (001) using high-resolution synchrotron radiation and x-ray photoemission. Reaction between Ti and Si was observed for temperatures 300≤T≤873 K. At 300 K, it was limited to Ti interaction with the single Si layer terminating the cleaved MoSi2 (001) surface. Analysis of the Si 2p core level line shape showed two different interfacial reaction products with bonding characteristics of TiSi and a disordered solution of Si in Ti. Interfacial development was dominated by Si outdiffusion at higher temperatures with Si enrichment of the overlayer but not conversion to a silicide.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103308
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  • 10
    Electronic Resource
    Electronic Resource
    A flow environment for studying vortex interactions (1994)
    Springer
    Experiments in fluids 18 (1994), S. 131-133 
    Details
    ISSN: 1432-1114
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The vortex formed at the tip of a propeller interacting with the vortex formed at the tip of a stator vane provides a unique environment for the study of vortex interactions. Changes in the relative vortex strengths and vortex rotational directions were determined to impact the resulting vortex structures and are easily implemented with the experimental apparatus described herein. Study of the development of the vortex interaction was determined to be possible by increasing the initial separation between the two vortices. Vortex interaction phenomenon has been observed using smoke flow visualization.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00209370
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