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  • 1
    Electronic Resource
    Electronic Resource
    Microstructure Evolution of Ti-Al Peritectic System during the Initiated Stage of Directional Solidification (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 546-549 (May 2007), p. 1447-1450 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The microstructure evolution of Ti-Al peretectic system in transient stage and steady statein directional solidification was predicted via theoretical analysis. The solute distribution controlledby diffusion at and ahead the solid-liquid interface will determine whether the properitectic andperitectic phases can nucleate and grow ahead of the opposing solid phase. The formation of bandingstructure is possible in a certain composition range. At the steady state, a microstructure selection mapwas set up based on interface response function model. The microstructure of TiAl alloys withdifferent aluminum content was studied with Bridgman directional solidification method. Someevidence in the experiment has been found to support the theoretical prediction
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/16/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.546-549.1447.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Treatments with Fracture Mechanics in Debonding of FRP-Strengthened Concrete Beams (2006)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 324-325 (Nov. 2006), p. 185-188 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: External bonding fiber reinforced polymers (FRP) to the tension faces of reinforcedconcrete (RC) beam as an effective approach of rehabilitation and strengthening of reinforcedstructures have attracted significant interests of researchers in the past decade. Since theload-carrying capacity of RC beams strengthened with the FRP is dominated by interfacialdelaminated failure, the anchorage strength in FRP to concrete bonded joints under shear and thedebonding stress transferring behavior at the end parts of flexural concrete members bonded withFRP have been deeply studied. Recently, methods of fracture mechanics have been introduced intoanalyzing the above issues. Compared with the traditional methods, the analytical models ofexisting fracture mechanics are reviewed and analyzed. Based on them the debonding bearingcapacity of FRP-strengthened RC beams is calculated and the corresponding finite element modelsare created. These models of fracture mechanics are then evaluated with the finite element resultsand the experimental data from author’s and the literature. Some conclusions with engineeringsignificance are drawn
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/52/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.324-325.185.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    Francisella strains express hemolysins of distinct characteristics (2003)
    Oxford, UK : Blackwell Publishing Ltd
    FEMS microbiology letters 224 (2003), S. 0 
    Details
    ISSN: 1574-6968
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Historically, Francisella strains have been described as nonhemolytic. In this study, we show by use of solid and liquid hemolysis assays that some Francisella strains have hemolytic properties. The Francisella novicida type strain U112 is hemolytic to horse erythrocytes and Francisella philomiragia type strain FSC144 is hemolytic towards both human and horse erythrocytes. The F. novicida strain U112 released a protein (novilysin A) into the culture supernatant which cross-reacted with antiserum against Escherichia coli HlyA whereas there was no similar protein detectable with this cross-reactive property from the supernatant of the F. philomiragia strain.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/S0378-1097(03)00431-2
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  • 4
    Electronic Resource
    Electronic Resource
    Crystallinity of ZnS:Tb,F thin films and characteristics of green-color thin-film electroluminescent devices prepared by rf-magnetron sputtering (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4655-4659 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to fabricate high-brightness thin-film electroluminescent devices, the dependence of crystallinity on deposition conditions of the ZnS:Tb,F thin films deposited by rf-magnetron sputtering system have been studied. The optimal deposition conditions to get the best crystallinity are obtained as rf power density of 4.39 W/cm2, substrate temperature 150 °C, and post-anneal at 550 °C for 1 h. The (111) plane spacing and lattice constant are 3.1238 and 5.411 A(ring), respectively. The green electroluminescent devices with the structure of glass/indium-tin-oxide/SiO2/HfO2/ZnS:Tb,F/HfO2/SiO2/Al have the highest brightness and luminous efficiency hη of 830 cd/m2 and 0.8 lm/W, respectively, under 1 kHz sinusoidal wave voltage excitation and the Commission Internationale de l'Eclairage chromaticity is x=0.3096, y=0.5998, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352121
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  • 5
    Electronic Resource
    Electronic Resource
    Effects of gamma-ray irradiation on the microstructural and luminescent properties of radio-frequency magnetron-sputtered GaN thin films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6355-6358 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructural and luminescent properties of sputtered GaN thin films preiiradiated and γ-ray irradiated were systematically investigated. Analytical results revealed that the increasing doses of γ rays could enhance the occurrence of more nitrogen vacancies, which not only created a prominent deep level luminescence but also destroyed the crystallinity of GaN thin films. For low dose of γ-ray irradiation [[less, double equals]4 Mrad (GaN)], evidence showed that by raising the irradiation dose, more associated Ga–H complexes would be effectively promoted, yielding an enhanced yellow band emission. However, for high dose of γ-ray irradiation [〉4 Mrad (GaN)], further higher doses of γ rays could lead to the dissociation of Ga–H complexes in GaN samples, resulting in a repressed yellow band emission. From both the Fourier transform infrared spectroscopy and yellow band emission results, it is strongly suggested that Ga–H complexes in the vicinity of N most probably act as the origin of yellow band emission in GaN material. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1324700
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  • 6
    Electronic Resource
    Electronic Resource
    The critical thickness of an epilayer deposited on a semiconductor-on-insulator compliant substrate (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1689-1691 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The critical thickness of an epilayer grown on a compliant substrate with the semiconductor-on-insulator configuration is investigated on the assumption that sliding boundary conditions hold along the interface between the thin crystal substrate and the amorphous underneath layer. An exact solution determining the critical thickness is formulated using both superposition and Fourier transformation. The results show that the critical thickness increases with the decreases in the thickness of the thin crystal substrate and the elastic constant of the insulator. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123656
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  • 7
    Electronic Resource
    Electronic Resource
    Acceptor activation of Mg-doped GaN by microwave treatment (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 312-313 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A microwave treatment method different from thermal annealing and low-energy electron beam irradiation was proposed to activate Mg dopants in p-type GaN epitaxial layer. From photoluminescence spectra and Hall effect measurements, it was shown that microwave treatment is a very effective way to activate the acceptors in Mg-doped p-type GaN layer. The activation of Mg dopant in p-type GaN layer may be explained as the breaking of magnesium–hydrogen bonding due to the microwave energy absorption. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1340864
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  • 8
    Electronic Resource
    Electronic Resource
    Modeling multipeak current–voltage characteristic and hysteresis phenomena for several resonant tunneling diodes connected in series (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5822-5828 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The multipeak current–voltage (I–V) characteristic and hysteresis phenomena based on a series combination of several resonant tunneling diodes (RTDs) are analyzed and simulated. Our analytic model is based on a load-line technique with a piecewise-linear approximation for the I–V curve of RTD. The peak-to-valley current ratio of N RTDs in series and the effects of series resistance on the combined I–V characteristic are investigated. The results provide a useful design and estimation for the multipeak I–V characteristic with series-connected several RTDs before circuit accomplishment. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366397
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  • 9
    Electronic Resource
    Electronic Resource
    A novel waveguide structure to reduce beam divergence and threshold current in GaInP/AlGaInP visible quantum-well lasers (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2245-2247 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel waveguide structure for AlGaInP visible separate confinement heterostructure quantum well laser with inserting low-refractive-index AlAs layers is theoretically investigated using the transfer matrix method. By using this structure, we can significantly improve the transverse beam divergence and reduce the threshold current. Otherwise, the inserting AlAs can also be used as a wet etching automatic stopped layer. Because the thermal resistance of AlAs is smaller than that of AlGaInP, the thermal characteristics of this novel structure are also better than the conventional AlGaInP visible lasers. With the inserting AlAs layers, the transverse beam divergence and the threshold current density can be reduced from 38° to 8.84° and 787 to 666.8 A/cm2, respectively. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120063
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  • 10
    Electronic Resource
    Electronic Resource
    Isolation of chromosome 6-encoded differentially expressed genes associated with breast cancer cell lines MDA-MB-231 and MDA/H6 by cDNA microarray (1999)
    [s.l.] : Nature America, Inc.
    Nature genetics 23 (1999), S. 77-77 
    Details
    ISSN: 1546-1718
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Medicine
    Notes: [Auszug] The loss of heterozygosity and chromosomal alterations were frequently observed on human chromosome 6 in cancers. In this study, we analyse the relative RNA levels between the parental breast cancer cell line MDA-MB-231 and the chromosome 6-mediated suppressed cell subline MDA/H6 using high-density ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/14413
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