ISSN:
1013-9826
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Pr6O11-doped bismuth titanate and random oriented BixPryTi3O12 ( y = 0.3, 0.6, 0.9, 1.2)thin films were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. Thesesamples had polycrystalline Bi-layered perovskite structure without preferred orientation, andconsisted of well developed rod-like grains with random orientation. Pr doping into BIT caused a shiftof the Curie temperature (TC) of the BIT from 675˚C to 578 , 517, 398 , and 315oC for the films with y= 0.3, 0.6, 0.9, and 1.2, respectively. The experimental results indicated that Pr doping into BIT resultin a remarkable improvement in dielectric properties. Raman analysis shows that Pr3+ and Pr4+ ionssubstitution only appears in A-sit
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/53/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.336-338.155.pdf
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