Electronic Resource
Peaker, A.R.
;
Markevich, V.P.
;
Slotte, J.
;
[et al.]
Kuitunen, K.
;
Tuomisto, F.
;
Satta, A.
;
Simoen, Eddy
;
Capan, I.
;
Pivac, B.
;
Jačimović, R.
s.l. ; Stafa-Zurich, Switzerland
Solid state phenomena
Vol. 131-133 (Oct. 2007), p. 125-130
ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
Fast neutron irradiation of germanium has been used to study vacancy reactions andvacancy clustering in germanium as a model system to understand ion implantation and the vacancyreactions which are responsible for the apparently low n-type doping ceiling in implantedgermanium. It is found that at low neutron doses (~1011cm-2) the damage produced is very similarto that resulting from electron or gamma irradiation whereas at higher doses (〉 1013cm-2) thedamage is similar to that resulting from ion implantation as observed in the region near the peak ofa doping implant. Electrical measurements including CV profiling, spreading resistance, Deep-Level Transient-Spectroscopy and high resolution Laplace Deep-Level Transient-Spectroscopyhave been used in conjunction with positron annihilation and annealing studies. In germanium mostradiation and implantation defects are acceptor like and in n-type material the vacancy is negativelycharged. In consequence the coulombic repulsion between two vacancies and between vacanciesand other radiation-induced defects mitigates against the formation of complexes so that simpledefects such as the vacancy donor pair predominate. However in the case of ion implantation andneutron irradiation it is postulated that localized high concentrations of acceptor like defectsproduce regions of type inversion in which the vacancy is neutral and can combine with itself orwith other radiation induced acceptor like defects. In this paper the progression from simpledamage to complex damage with increasing neutron dose is examined
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.131-133.125.pdf
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