Electronic Resource
PO Box 1354, 9600 Garsington Road, Oxford OX4 2XG, UK.
:
Blackwell Science Ltd
Fatigue & fracture of engineering materials & structures
28 (2005), S. 0
ISSN:
1460-2695
Source:
Blackwell Publishing Journal Backfiles 1879-2005
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The fracture toughness of single-crystal silicon thin films oriented to (100) and (110) was investigated by tensile testing under both 〈100〉 and 〈110〉 loading conditions. The specimen was fabricated from a p-type Czochralski (CZ)-grown wafer and passed through a thermal process during the fabrication of the test device. The measured fracture toughness is dependent on the loading direction in the tensile test and independent of the specimen surface orientation. The test results were 1.94 MPa√m in the 〈100〉 direction and 1.17 MPa√m in the 〈110〉. In these tests, no longitudinal size effect on the fracture stress or fracture toughness was observed. The SEM photographs obtained from the fracture specimens after the tensile test show that the crack initiated from the notch tip and propagated straight in the across-the-width direction on the (110) or (111) cleavage plane.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1111/j.1460-2695.2005.00920.x
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