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  • 1
    Electronic Resource
    Electronic Resource
    Sub-100 μA current operation of strained InGaAs quantum well lasers at low temperatures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1805-1807 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Very low threshold currents (〈100 μA) have been achieved in InGaAs strained single quantum well lasers at cryogenic temperatures. Threshold currents of 38 and 56 μA and external quantum efficiency ∼1 mW/mA have been demonstrated under cw operation condition at temperatures of 6 and 77 K, respectively. The external quantum efficiency increased by about a factor of 2 at low temperatures (〈100 K) in comparison to that at room temperature. These results are relevant to the prospect of integration of semiconductor lasers with low temperature electronics for high performance © 1994 American Institue of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112849
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  • 2
    Electronic Resource
    Electronic Resource
    Passive microring-resonator-coupled lasers (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3561-3563 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, a passive microring-resonator-coupled semiconductor laser structure is proposed. The weakly coupled high-Q microring resonator provides a strong mode-selection filter and could considerably extend the effective cavity length of a conventional Fabry–Perot laser. The side-mode suppression ratio, the linewidth and the frequency chirp of this laser are dramatically improved comparing to distributed feedback and distributed Bragg reflector lasers. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1420585
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  • 3
    Electronic Resource
    Electronic Resource
    A wavelength multiplexer using cascaded three-dimensional vertical couplers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 282-284 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A four-channel wavelength multiplexer/demultiplexer for sparse wavelength division multiplexing was demonstrated using cascaded three-dimensional (3D) vertical couplers. 17 nm channel spacing with crosstalk less than 15 dB was achieved. Strong coupled vertical couplers were fabricated using wafer bonding to invert a conventionally processed epitaxial layer and bond to a new host substrate. This technology makes the fabrication of 3D photonic integrated circuits and the realization of multilevel optical interconnects possible. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125722
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  • 4
    Electronic Resource
    Electronic Resource
    Thermionic emission cooling in single barrier heterostructures (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 88-89 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonisothermal transport in InGaAsP-based heterostructure integrated thermionic coolers is investigated experimentally. Cooling on the order of a degree over 1 μm thick barriers has been observed. This method can be used to enhance thermoelectric properties of semiconductors beyond what can be achieved with the conventional Peltier effect. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122960
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  • 5
    Electronic Resource
    Electronic Resource
    Fused vertical couplers (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2637-2638 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A vertical directional coupler fabricated using wafer fusion is demonstrated with a very short coupling length of 62 μm. The optical propagation loss introduced by the fused layer is investigated. An excess loss of 1.1 dB/cm at 1.55 μm was measured for waveguides which incorporate a fused junction near the core region. Fused vertical couplers make it possible to realize three-dimensional waveguide structures and compact switching arrays and they solve some of the topology problems of large switch arrays. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121440
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  • 6
    Electronic Resource
    Electronic Resource
    The effect of temperature on the resonant tunneling and electric field domain formation in multiple quantum well superlattices (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 2033-2035 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Analyzing the photocurrent spectra and the I–V characteristics of weakly coupled GaAs/AlGaAs multiquantum well structures, different transport regimes are distinguished. At low temperatures (below ∼50 K), due to the electron coherence over a few periods of the superlattice, electron transport is dominated by sequential resonant tunneling. At higher temperatures, evidences for the increased contribution of nonresonant transport processes, and the subsequent modification in the electric field distribution in the device, are presented. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364062
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  • 7
    Electronic Resource
    Electronic Resource
    Quantum interference effect and electric field domain formation in quantum well infrared photodetectors (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3307-3309 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An observation of quantum interference effect in photocurrent spectra of a weakly coupled bound-to-continuum multiple quantum well photodetector is reported. This effect persists even at high biases where the Kronig–Penney minibands of periodic superlattice potential in the continuum are destroyed. Our results show that electrons remain coherent over a distance of 40–50 nm. The observation was used to investigate electric field domain formation induced by sequential resonant tunneling in the superlattice. A large off-resonant energy level alignment between two neighboring wells in the high field domain was observed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113739
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  • 8
    Electronic Resource
    Electronic Resource
    Control of electric field domain formation in multiquantum well structures (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1101-1103 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation, expansion, and readjustment of electric field domains in multiquantum well stacks is described and explained in terms of sequential resonant tunneling. These effects are used to control the multiband spectral response in IR detector applications of these structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109793
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  • 9
    Electronic Resource
    Electronic Resource
    Observation of birefringence induced by intersubband transitions in quantum wells (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2720-2722 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a direct measurement of the birefringence induced by the intersubband transitions in quantum wells. Phase delays of up to 40° were observed in our samples, corresponding to a 0.07 difference in the index of refraction between the polarizations parallel and perpendicular to the plane of the wells in a GaAs/AlGaAs silicon-doped structure. The measurement was conducted at several wavelengths—enabling us to deduce the total linear birefringence near the absorption resonance. The observed birefringence is in close agreement with the Kramers–Kronig transform of the absorption spectra.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110365
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  • 10
    Electronic Resource
    Electronic Resource
    Voltage-controlled tunable GaAs/AlGaAs multistack quantum well infrared detector (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2362-2364 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a new type of intersubband GaAs/AlGaAs infrared detector consisting of three stacks of quantum wells; the quantum wells in a given stack are identical, but are different from stack to stack. Each stack is designed to yield an absorption and a photoresponse at a different peak wavelength. The resulting device is an infrared detector which can operate in a number of modes. Among the features of this device are a wide-band detection domain, a tunable response and excellent responsivities and noise figures. The tunable operation includes a sharp peak-switching response which follows the formation, expansion, and readjustment of electric field domains within the multiquantum well region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107026
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