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  • 1
    Electronic Resource
    Electronic Resource
    All-optical modulation using an n-doped quantum-well structure (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6529-6531 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The modulation of interband-resonant light by intersubband-resonant light using an n-doped quantum well is proposed, and results of the theoretical analysis are reported. It is shown that a large change in absorption coefficient from 100 to 3160 cm−1 for interband-resonant light can be obtained by changing the intensity of intersubband-resonant light from 0 to 1 MW/cm2. Very fast modulation speed (∼ps) can be expected.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346830
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  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescent properties and optical absorption of AlAs/GaAs disordered superlattices (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5318-5323 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A disordered superlattice, a recently proposed artificially constructed material, is fabricated and photoluminescent properties and optical absorption are investigated. Disorder is intentionally introduced into the period of the superlattice in order to enhance its photoluminescence. The photoluminescent temperature dependences and the optical absorption spectra of Al0.5Ga0.5As bulk alloy, AlAs/GaAs ordered superlattice, and AlAs/GaAs disordered superlattice are studied and compared. The optical absorption spectra suggest that localized states are created in the band tail of the AlAs/GaAs disordered superlattice. The photoluminescence spectra of the disordered superlattice are strongly dependent on the localized states, and the temperature dependence of photoluminescence intensities obeys the same relation IPL∝[1+A exp(T/T0)]−1 as that reported for amorphous semiconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347025
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  • 3
    Electronic Resource
    Electronic Resource
    Photoluminescence thermal-quenching and carrier localization of AlGaAs disordered superlattices (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4693-4700 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal quenching properties of disordered superlattices (d-SLs) are experimentally investigated. Three types of d-SLs with (1) various band-gap differences, (2) various unit lengths of disorder, and (3) various appearance probabilities of disordered layers are used for experiments. Thermal quenching properties of photoluminescence intensities are investigated for the estimation of strength of disorder. Consistent results are obtained in that the thermal quenching becomes small with increasing disorder for each type of d-SL. Abrupt changes in the thermal quenching characteristics are observed at the type-I/type-II transitions of AlyGa1−yAs/GaAs d-SLs and o-SLs. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359437
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  • 4
    Electronic Resource
    Electronic Resource
    Raman study of strain relaxation in Ge on Si (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5144-5148 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strain in thin Ge layers grown by molecular beam epitaxy on (100) Si is measured by a Raman technique. When the average Ge thickness is 7 monoatomic layers (ML), Raman results show that the layer is almost coherent to the Si lattice. The strain begins to decrease at an average thickness of 10 ML, i.e., the critical thickness of dislocation generation is 10 ML. On the other hand, the relaxation begins at a thickness of 5 ML, according to reflection high-energy electron diffraction observation during the growth. This initial stage relaxation is due to deformation of islands and not due to dislocation formation. Raman results for thicker layers show that with increasing layer thickness, the misfit strain decreases gradually but more rapidly than predicted by the theory of Matthews and Blakeslee . © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359258
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  • 5
    Electronic Resource
    Electronic Resource
    Structure and photoluminescence of AlP/GaP short-period superlattices grown by organometallic vapor phase epitaxy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 524-532 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Short-period superlattices of (AlP)m/(GaP)n (m, n=4–11.5) are grown by atmospheric pressure organometallic vapor phase epitaxy using tertiarybutylphosphine as a phosphorus source. Structural and optical properties of the grown superlattices are characterized by double-crystal x-ray diffraction and photoluminescence (PL) measurements, respectively. By comparing the measured and the calculated full width at half-maximum of satellite peaks, we find that very high quality superlattices with atomically abrupt heterointerfaces are achieved. Strong emission of bound exciton is observed at low temperature. The exciton emission, however, disappears quickly as the temperature is increased, and only PL lines due to impurity recombination remain at high temperature ((approximately-greater-than)30 K). No evident phonon replica is observed in the PL spectra. From these results, a direct band-gap structure seems to be realized as expected from the zone-folding effect. However, the absence of band-to-band direct transition at high temperature suggests that the direct transition probability between the zone-folded conduction band and the valence band is not so large.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357105
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  • 6
    Electronic Resource
    Electronic Resource
    Strain effects on photoluminescence properties of Ge/Si disordered superlattices (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7961-7965 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strain effects on the enhancement of the luminescence capability of Ge/Si disordered superlattices (d-SLs) are investigated by comparing the photoluminescence (PL) properties of Ge/Si superlattices grown on Si substrate and on strain-free SiGe buffer layer as a substrate. The conduction valley, Δx,y or Δz, becomes the minimum energy state in the superlattices which is dependent on the strain and thus strained or strain-free substrate. In the case of d-SLs on the Si substrate, there is no significant enhancement by artificially introduced disordering on the PL properties. On the contrary, remarkably enhanced photoluminescence is observed in the d-SLs grown on the SiGe buffer layer, showing that d-SLs of SiGe material enhance the luminescence capability similar to the AlAs/GaAs and AlP/GaP d-SLs. The improvement of the PL properties by the d-SL grown on the SiGe buffer layer is discussed in the viewpoint of the directions of carrier localization and required for the carrier recombination. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365371
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  • 7
    Electronic Resource
    Electronic Resource
    Investigation of short wavelength intersubband transitions in InGaAs/AlAs quantum wells on GaAs substrate (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 3385-3391 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InGaAs/AlAs quantum wells on GaAs substrates were studied for near-infrared intersubband transitions. The relationships between the properties of the intersubband absorption and the structural/growth conditions of the quantum wells were quantitatively investigated by using theoretical calculations based on a k-p perturbation method. The total intersubband absorption magnitude is shown to be closely related to the leakage of free carriers from the Γ minimum of the well to the X minimum of the barrier. This work provides important information for design of devices utilizing short wavelength intersubband transitions. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365652
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  • 8
    Electronic Resource
    Electronic Resource
    DX-center-like traps and persistent photoconductivity in Te-doped AlxGa1−xSb on GaSb (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1897-1901 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The donor-related deep electron traps in Te-doped Alx Ga1−x Sb on GaSb substrate were investigated by deep level transient spectroscopy, capacitance-voltage, photocapacitance, and Hall-effect measurements. Deep electron traps were not detected in the Al composition range 0≤x〈0.2, but were detected in the higher range of x. The concentration of the deep electron traps increases steeply with x and then saturates. The concentration also increases linearly with donor concentration for the same Al composition. In the temperature-dependent Hall-effect measurement, both shallow donor and deep donor levels were observed. The deep donor is dominant for x≥0.4, and the thermal activation energy E0 increases dramatically from 6 to 110 meV in the range of 0.2〈x≤0.5. Persistent photoconductivity was observed for x≥0.3 at temperatures below 100 K. All the experimental results indicate that the deep electron traps in Te-doped Alx Ga1−x Sb are quite similar to the DX center in Alx Ga1−x As.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341740
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  • 9
    Electronic Resource
    Electronic Resource
    Short-range order in III-V ternary alloy semiconductors (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3850-3855 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atom arrangements in III-V ternary alloy semiconductors are discussed using a thermodynamic analysis in which the elastic strain caused by mixing is considered as the mixing enthalpy. In calculating the strain energy, both bond-stretching and bond-angle distortion are taken into account, and Martin's microscopic elastic constants are used. The results show that there is a preference for ordering but not for clustering in III-V ternary alloy semiconductors. Values of short-range order parameters which represent the degree of ordering are obtained for several alloy semiconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337555
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  • 10
    Electronic Resource
    Electronic Resource
    Bonding configuration of fluorine in fluorinated silicon nitride films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3481-3486 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bonding configuration of constituent elements in fluorinated silicon nitride insulating films prepared by reactive plasma of SiF4 (or SiF2), N2, and H2 gas mixture is investigated by means of optical absorption analysis and electron-spin resonance study. Fluorine is bonded to silicon rather than to nitrogen. Slight variations of spin density and optical gap with chemical composition are attributed to the complemental increase of fluorine with decrease of nitrogen, and to the passivation of silicon dangling bonds by fluorine atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341483
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