AIP Digital Archive
Thin titanium nitride (TiN) films have been prepared by simultaneous Ti evaporation and 30 keV N2+ implantation onto Si(100) wafers, in the presence of a N2 partial atmosphere. A systematic chemical and compositional evaluation of the films has been performed by Auger electron spectroscopy and x-ray photoemission spectroscopy checking the homogeneity level, the degree of gaseous contamination, the different compounds formed by titanium and nitrogen, and their depth distribution. The Rayleigh velocity at various angles of incidence has been determined via Brillouin scattering measurements. The evidence of a Sezawa mode confined in the overlayer was also found. The films, which consist of a homogeneous outer layer above a relatively wide interface region with the substrate, show aging effects. On a mesoscopic scale, the film structure appears porous. © 1999 American Institute of Physics.
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