ISSN:
1572-9486
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract In this paper we have studied the island formation during InAs/Si(100) three dimensional (3D) heteroepitaxial growth using RHEED, SEM and TEM methods. We have found the strong influence of the growth conditions on the surface morphology. Both kinetic and energetic parameters play an important role during the growth in InAs/Si system. Dislocation–free InAs islands are formed at the Si(100) when lateral size is less then 5 nm.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1022811613305
Permalink