ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 1
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Microwave ion sources for implantation have many advantages, such as the long life of source operation and the cleanliness of extracted beam, over the traditional dc-arc-discharge-type ion sources. We reported that optimizing the plasma-chamber structure made the microwave source exceed most of traditional dc-arc-discharge sources in extracted-ion currents of most species that are used for fabricating modern ultralarge scale integrations. After studying the source magnetic field in detail by computer simulation, the relationship between the magnetic-field profile and the plasma-chamber structure is found to be essential. Two-dimensional analysis is carried out since the plasma is generated between parallel plate electrodes. The optimum chamber structure with which the maximum current was obtained in the last beam-extraction experiments is shown to contain the major magnetic field that is focused by the iron pole pieces. Most of the magnetic-field lines that are crossing the region where ions are first generated do not disappear into the sidewalls of the chamber. Since the lifetimes of ions become longer, the plasma density increases. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 2
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Industrial applications of ion beams began in the 1970s with their application in fabrication of semiconductor devices. Since electronic characteristics of semiconductors are very sensitive to the amount of doped elements and to the species, the ion beams should be precisely mass separated. Nowadays, ion implantation is expected to be used for surface modification of materials. For this the needed beam purity is lower, but the needed dose is higher, since mechanical and/or chemical characteristics of materials, which are less sensitive to the dose, should be improved rather than electronic ones. Mass resolution by a separator may be lowered to allow mixing of some neighboring elements and in some cases mass separation may be completely eliminated. Many ion sources have been developed for such applications; however, most were used for research work. In this paper, some of the typical ion sources are reviewed from the viewpoint of future industrial use.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 3
    ISSN: 1662-0356
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Natural Sciences in General , Technology
    Notes: In order to fabricate two-dimensional micro actuators with shape memory alloy films, it isespecially important to evaluate the anisotropy of transformation strain that is caused by texture. Inthis paper, microstructures of sputter-deposited TiNi films are examined. The films of 1 μm inthickness are sputter-deposited on Si(001) substrates by RF magnetron multi-sputtering systemequipped with four separate confocal sources as well as with substrate heating. Pure Ti and Ni targetsof 50 mm in diameter are used for the sources. The films deposited at ambient temperature have beengenerally amorphous. However, we find that some films which are deposited at 773K of substratetemperature are crystalline, when we appropriately choose sputtering parameters such as sourcevoltage and the distance between a target and the substrate. X-ray powder diffraction and pole figuremeasurements reveal that these films are oriented with {110}B2 parallel or inclined at 45 degree tothe substrate. Furthermore, we also find that crystallized film is deposited even at 673K of substratetemperature by applying pulse bias voltage to the substrate
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...