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  • 1
    Electronic Resource
    Electronic Resource
    Positron annihilation spectroscopy of vacancy-related defects in semiconductors
    Amsterdam : Elsevier
    Progress in Crystal Growth and Characterization of Materials 25 (1992), S. 241-256 
    Details
    ISSN: 0960-8974
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Geosciences , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0960-8974(92)90014-H
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  • 2
    Electronic Resource
    Electronic Resource
    Defects in H implanted GaAs studied by ion-beam and low-energy positron techniques
    Amsterdam : Elsevier
    Physica B: Physics of Condensed Matter 170 (1991), S. 235-239 
    Details
    ISSN: 0921-4526
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0921-4526(91)90129-3
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  • 3
    Electronic Resource
    Electronic Resource
    Gallium vacancies and the growth stoichiometry of GaN studied by positron annihilation spectroscopy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3253-3255 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have applied positron spectroscopy to study the formation of vacancy defects in undoped n-type metal organic chemical vapor deposition grown GaN, where the stoichiometry was varied. Ga vacancies are found in all samples. Their concentration increases from 1016 to 1019 cm−3 when the V/III molar ratio increases from 1000 to 10 000. In nitrogen rich conditions Ga lattice sites are thus left empty and Ga vacancies are abundantly formed. The creation of Ga vacancies is accompanied by the decrease of free electron concentration from 1020 to 1016 cm−3, demonstrating their role as compensating centers. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122735
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  • 4
    Electronic Resource
    Electronic Resource
    Microscopic nature of thermally stimulated current and electrical compensation in semi-insulating GaAs (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 3512-3521 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work undoped semi-insulating (SI) GaAs grown by vertical gradient freeze and liquid encapsulated Czochralski methods was studied by near-infrared absorption (NIRA), thermally stimulated current (TSC) and positron annihilation techniques. The positron experiments reveal both gallium and arsenic vacancies, as well as gallium and arsenic antisites, in the samples. By comparing the results from the TSC and positron measurements, the following relations are found in the defect concentrations: trap T2 correlates with the arsenic antisite and trap T5 with the arsenic vacancy. The ionized fraction of the arsenic-antisite-related EL2 defect is obtained from NIRA measurements. The positive charge of these ionized EL2 defects correlates with the net negative charge, 3[VGa3−]+2[GaAs2−]−[VAs+], related to the gallium vacancies and antisites and arsenic vacancies detected in positron measurements. The intrinsic defects may thus contribute significantly to the electrical compensation in SI GaAs. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364705
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  • 5
    Electronic Resource
    Electronic Resource
    Characterization of defects in (ZnMg)Se compounds by positron annihilation and photoluminescence (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1325-1332 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Defect characterization of as-grown Zn1−xMgxSe mixed crystals (0≤x〈0.6) and the effect of Zn vapor annealing has been studied by positron lifetime and photoluminescence measurements. We obtain both experimental and theoretical evidence that the bulk lifetime of free positrons increases linearly with Mg alloying. The average positron lifetime increases with temperature indicating that both vacancies and negative ions trap positrons. The decompositions of the lifetime spectra show that the vacancy has the characteristic positron lifetime of 325 ps. The comparison with theoretical calculations indicate that the lifetime 325 ps corresponds either to divacancies relaxed inwards or to monovacancies strongly relaxed outwards. We consider the latter identification more likely and attribute the positron lifetime 325 ps to Zn vacancy or a complex involving VZn. The vacancy concentration is almost independent of Mg content above x=0.2 but decreases strongly at x=0.56. The Zn vapor annealing decreases the concentration of Zn vacancies. The intensity of the green photoluminescence correlates with the concentration of VZn both as a function of Mg alloying and Zn vapor annealing. We thus conclude that the electron levels of the Zn vacancy are involved in the optical transition leading to the green photoluminescence. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373821
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  • 6
    Electronic Resource
    Electronic Resource
    Defects in GaAs grown by molecular-beam epitaxy at low temperatures: stoichiometry, doping, and deactivation of n-type conductivity (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1888-1897 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use a low-energy positron beam to study the influence of doping and stoichiometry on the native defects in GaAs grown by molecular-beam epitaxy at 250 °C. Ga vacancies are identified in all samples by measuring the momentum distribution of annihilating core electrons. The charge of VGa is negative in Si-doped samples but neutral in undoped and Be-doped material. We propose that the Ga vacancies are complexed with As antisites in undoped and Be-doped samples and with Si impurities in n-type material. The concentration of Ga vacancies depends on the doping and stoichiometry of growth conditions. It follows generally the trends in the VGa formation energy as a function of the Fermi level position and stoichiometry. The strong loss of free carriers in the As-rich Si-doped samples is attributed to the formation of Ga vacancy complexes, negative ion defects and inactive clusters of Si atoms. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370984
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  • 7
    Electronic Resource
    Electronic Resource
    The influence of Mg doping on the formation of Ga vacancies and negative ions in GaN bulk crystals (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2441-2443 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gallium vacancies and negative ions are observed in GaN bulk crystals by applying positron lifetime spectroscopy. The concentration of Ga vacancies decreases with increasing Mg doping, as expected from the behavior of the VGa formation energy as a function of the Fermi level. The concentration of negative ions correlates with that of Mg impurities determined by secondary ion mass spectrometry. We thus attribute the negative ions to MgGa〈sup ARRANGE="STAGGER"〉−. The negative charge of Mg suggests that Mg doping converts n-type GaN to semi-insulating mainly due to the electrical compensation of ON〈sup ARRANGE="STAGGER"〉+ donors by MgGa〈sup ARRANGE="STAGGER"〉− acceptors. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125041
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  • 8
    Electronic Resource
    Electronic Resource
    Near-band-edge absorption and positron trapping under illumination in semi-insulating GaAs: Role of As vacancies (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2534-2536 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that positron trapping at negative As vacancies revealed under illumination in bulk semi-insulating GaAs correlates with a form of near-band-edge absorption known as reverse contrast (RC). We conclude that it is the ionization of As vacancies to their negative charge state that gives rise to RC absorption. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113158
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  • 9
    Electronic Resource
    Electronic Resource
    Observation of Ga vacancies in silicon δ-doping superlattices in (001) GaAs (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1843-1845 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Positron annihilation experiments have been performed to investigate the compensating defects in silicon δ-doping superlattices in (001) GaAs. The results reveal vacancies and ion-type defects, which are located between the delta planes in undoped GaAs. The vacancy defect is identified as the Ga vacancy and the negative ion is attributed to the Ga antisite. The concentrations of these defects increase strongly, when the areal concentrations of free carriers are reduced at the delta planes. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119417
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  • 10
    Electronic Resource
    Electronic Resource
    Using positron 2D-ACAR as a probe of point defects in GaAs: The As vacancy as a case study (1996)
    Springer
    Applied physics 62 (1996), S. 529-532 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 78.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Two-Dimensional Angular Correlation of positron Annihilation Radiation (2D-ACAR) experiments have been performed on n-type GaAs. By combining these results with those from positron lifetime experiments, the momentum distribution of the arsenic vacancy in its neutral (V aAs 0 ) and negative (V As − ) charge states have been extracted. These distributions were all normalized to the respective positron lifetime that characterizes them. The first thing to be noticed is that the momentum distributions of the vacancies, as seen by the positron, are fairly isotropic and structureless. The distribution forV As 0 is more peaked than that ofV As − while the latter is more intense in the large momentum regions of the spectra. From this, it can be inferred that VA. has a smaller open volume thanV As 0 A closer look at the momentum distribution of the vacancies reveals that they are not entirely isotropic, but, in fact, have a bulk-like component. Finally, the experimental results for bulk GaAs andV As − compare well in a qualitative manner with the momentum distributions that result from an ab-initio molecular dynamics calculation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01571688
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