ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Photoreflectance (PR) of surface-intrinsic-n+ (s-i-n+) type doped GaAs has been simulated by electroreflectance (ER). The simulated spectra of the s-i-n+ sample have exhibited many Franz–Keldysh oscillations, which enable the electric field (F) to be determined. It is known that F's determined from PR are subjected to photovoltaic effect and the measured F is close to Fbi−δF/2 when the modulating field, δF(very-much-less-than)Fbi, where Fbi is the built-in field of the sample and δF is the modulating field. In this work, we have investigated the relation between the measured F and δF not only for the region where δF(very-much-less-than)Fbi holds, but also for a whole range of δF. In order to determine the magnitude of δF, we have used ER to simulate PR, that is, the measurements of ER under a forward bias, which is set to be equal to δF/2. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.369746
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