Publication Date:
2016-04-29
Description:
We have investigated the properties of black Si field emitter arrays under strong electric fields and laser illumination. A low onset field of 1.8 MV/m for an emission current of 1 nA was obtained. A pronounced saturation region of the dark and photo-enhanced current was observed, which provided a short-term stability of 0.1% at 0.4 μ A and 0.7% at 1.0 μ A, respectively. As maximum value for the photosensitivity, an on-off current switching ratio of 43 reaching about 13 μ A was achieved at a laser power of 15 mW. Electron spectra in the dark and under laser illumination are presented, showing a current and light-sensitive voltage drop across the emitters as well as hints for hot electron emission.
Print ISSN:
0021-8979
Electronic ISSN:
1089-7550
Topics:
Physics
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