Publication Date:
2014-06-24
Description:
Adjusting the growth conditions from those for c -plane growth realizes high-quality semipolar ( 1 1 ¯ 02 ) AlGaN/AlN quantum wells (QWs) with atomically smooth surfaces and abrupt interfaces on AlN substrates. Upon comparing the optical properties to those of c -plane QWs using time-integrated and time-resolved photoluminescence spectroscopy, the estimated internal electric field is much smaller in ( 1 1 ¯ 02 ) AlGaN/AlN QWs than in c -plane QWs. Thus, ( 1 1 ¯ 02 ) AlGaN/AlN QWs have narrower emission line widths and remarkably faster radiative recombination lifetimes, realizing highly efficient deep ultraviolet emissions.
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics
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