Publication Date:
2015-04-04
Description:
The widespread use of thermoelectric technology is constrained by a relatively low conversion efficiency of the bulk alloys, which is evaluated in terms of a dimensionless figure of merit (zT). The zT of bulk alloys can be improved by reducing lattice thermal conductivity through grain boundary and point-defect scattering, which target low- and high-frequency phonons. Dense dislocation arrays formed at low-energy grain boundaries by liquid-phase compaction in Bi(0.5)Sb(1.5)Te3 (bismuth antimony telluride) effectively scatter midfrequency phonons, leading to a substantially lower lattice thermal conductivity. Full-spectrum phonon scattering with minimal charge-carrier scattering dramatically improved the zT to 1.86 +/- 0.15 at 320 kelvin (K). Further, a thermoelectric cooler confirmed the performance with a maximum temperature difference of 81 K, which is much higher than current commercial Peltier cooling devices.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Kim, Sang Il -- Lee, Kyu Hyoung -- Mun, Hyeon A -- Kim, Hyun Sik -- Hwang, Sung Woo -- Roh, Jong Wook -- Yang, Dae Jin -- Shin, Weon Ho -- Li, Xiang Shu -- Lee, Young Hee -- Snyder, G Jeffrey -- Kim, Sung Wng -- New York, N.Y. -- Science. 2015 Apr 3;348(6230):109-14. doi: 10.1126/science.aaa4166.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Materials Research Center, Samsung Advanced Institute of Technology, Samsung Electronics, Suwon 443-803, South Korea. sang.il.kim@samsung.com kimsungwng@skku.edu. ; Department of Nano Applied Engineering, Kangwon National University, Chuncheon 200-701, South Korea. ; Department of Energy Science, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon 440-746, South Korea. IBS Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University, Suwon 440-746, South Korea. ; Materials Research Center, Samsung Advanced Institute of Technology, Samsung Electronics, Suwon 443-803, South Korea. Materials Science, California Institute of Technology, Pasadena, California 91125, USA. ; Materials Research Center, Samsung Advanced Institute of Technology, Samsung Electronics, Suwon 443-803, South Korea. ; Department of Energy Science, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon 440-746, South Korea. Materials Science, California Institute of Technology, Pasadena, California 91125, USA. ; Department of Energy Science, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon 440-746, South Korea. IBS Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University, Suwon 440-746, South Korea. sang.il.kim@samsung.com kimsungwng@skku.edu.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/25838382" target="_blank"〉PubMed〈/a〉
Print ISSN:
0036-8075
Electronic ISSN:
1095-9203
Topics:
Biology
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Chemistry and Pharmacology
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Computer Science
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Medicine
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Natural Sciences in General
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Physics
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