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  • 1
    Electronic Resource
    Electronic Resource
    Electrical single probe with an automatic positioner (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 185-187 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An easy to assemble and inexpensive plasma diagnostic system is presented. An electrical single probe and its vacuum and electrical isolation arrangement, integrated to an automatic positioner device, has been constructed and tested in plasma environments. This system provides a more precise estimation of the probe electrode position than others previously proposed in the literature. To control the probe electrode position an electronic circuit based in a microcontroller device is used. This automatic positioner avoids the troubles related to a manual operation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146568
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  • 2
    Electronic Resource
    Electronic Resource
    The effect of Si doping on the defect structure of GaN/AlN/Si(111) (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3362-3364 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of Si doping on the structural quality of wurtzite GaN layers grown by molecular beam epitaxy on AlN buffered (111) Si substrates is studied. The planar defect density in the grown GaN layer strongly increases with Si doping. The dislocation density at the free surface of GaN significantly decreases when Si doping overpasses a limit value. Si doping affects the misorientation of the subgrains that constitutes the mosaic structure of GaN. The increase of the planar defect density and out-plane misorientation angles of the GaN subgrains with Si doping explain the decrease of dislocations that reach the free surface of GaN. A redshift in the photoluminescence spectra together with a decrease in the c-axis lattice parameter as the Si doping increases point to an increase in the residual biaxial tensile strain in the GaN samples. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123345
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  • 3
    Electronic Resource
    Electronic Resource
    A mechanism for the multiple atomic configurations of inversion domain boundaries in GaN layers grown on Si(111) (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3588-3590 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomic structure investigation has been carried out on inversion domain boundaries in GaN layer grown on Si(111) by molecular-beam epitaxy. The comparison of the stacking sequences between simulated and experimental high resolution electron microscopy images shows the existence of two different atomic configurations for the inversion domain boundaries: the Holt model coexists with the V model inside the same layers. A mechanism allowing the switch from one model to the other by the interaction with the I1 stacking fault is proposed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1396322
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  • 4
    Electronic Resource
    Electronic Resource
    Inversion domains in GaN layers grown on (111) silicon by molecular-beam epitaxy (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2688-2690 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscopy is used to investigate GaN layers grown on Si(111) substrates by plasma-assisted molecular-beam epitaxy. These layers were grown on top of different AlN buffer layers. Multiple-beam dark-field techniques applied to both cross-sectional and planar-view samples show the presence of inversion domains. These domains grow directly from the interface with the Si(111) substrate. Such observations are related, as in the case of growth on sapphire, to the symmetry difference between wurtzite and diamond. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1368373
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  • 5
    Electronic Resource
    Electronic Resource
    Estimations des erreurs de meilleure approximation polynomiale et d'interpolation de Lagrange dans les espaces de Sobolev d'ordre non entier (1984)
    Springer
    Numerische Mathematik 45 (1984), S. 301-321 
    Details
    ISSN: 0945-3245
    Keywords: AMS(MOS): 65N30 ; CR: G18
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mathematics
    Description / Table of Contents: Summary Explicit bounds for the best polynomial approximation error, explicit and non-explicit bounds for the Lagrange interpolation error are derived for functions belonging to fractional order Sobolev spaces defined over a bounded open set in ℝ n . Thus the classical results of the integer order Sobolev spaces are extended.
    Notes: Résumé On établit des majorations explicites de I'erreur de meilleure approximation polynomiale ainsi que des majorations explicites et nonexplicites de I'erreur d'interpolation de Lagrange, lorsque la fonction considérée appartient à un espace de Sobolev d'ordre non entier défini sur un ouvert borné de ℝ n . Les résultats obtenus généralisent les résultats connus dans le cas des espaces de Sobolev d'ordre entier.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01389473
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  • 6
    Electronic Resource
    Electronic Resource
    The specific heat and critical magnetic field of superconducting PdH(D) (1981)
    Springer
    Journal of low temperature physics 43 (1981), S. 205-215 
    Details
    ISSN: 1573-7357
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract From the solution of the Eliashberg equations on the imaginary axis, the thermodynamic properties, specific heat, and critical magnetic field of PdH(D) have been calculated. The Eliashberg kernels α2(Ω)F(Ω) were constructed using a published value of α2(Ω), and F(Ω) was obtained from inelastic neutron scattering data. The results for the specific heat are in good agreement with published experimental data. The critical magnetic field shows a nearly parabolic behavior as a function of temperature, in disagreement with the linear experimental behavior. The deviation function D(t) and the ratios δC(T c)/γT c and γ[T c/H c(0)]2 indicate that the PdH(D) system is BCS-like. The functional derivative of T c with respect to changes in the kernel is also calculated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00116151
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  • 7
    Electronic Resource
    Electronic Resource
    Do Germination Indices Adequately Reflect Allelochemical Effects on the Germination Process? (1997)
    Springer
    Journal of chemical ecology 23 (1997), S. 2445-2453 
    Details
    ISSN: 1573-1561
    Keywords: Allelochemical ; allelopathy ; benzoxazolinone ; germination ; hydroxamic acid ; indices ; Lactuca sativa ; phenol ; p-hydroxybenzoic acid ; protocatechuic acid
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology
    Notes: Abstract Allelopathy is often demonstrated by testing allelochemical effects on germination using many germination indices to assess them. The objective of this work was to compare four common germination indices (GT, S, AS, and CRG) previously calculated with the same data in order to discuss their physiological meaning. Each index led to a different interpretation of allelochemical effect on germination. Considering all indices, the S index was the most sensitive, followed by the AS and CRG indices, which provided the same information. The GT index, which gave only a global germination interpretation, was not precise enough in describing allelochemical actions during germination. Nevertheless, none of the indices exactly reflected the germination process. Thus, simple comparisons between the control and the test at each exposure time were more appropriate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/B:JOEC.0000006658.27633.15
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  • 8
    Electronic Resource
    Electronic Resource
    Oxidation of methanol to formaldehyde on iron-molybdenum oxide catalysts, with and without chromium as a promoter (1989)
    Springer
    Reaction kinetics and catalysis letters 38 (1989), S. 193-198 
    Details
    ISSN: 1588-2837
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Description / Table of Contents: Abstract Катализаторы окислов железа-молибдена приготовлены добавлением хрома к одному из них в качестве промоторов. Оба катализатора, вместе с торговыми, характеризовали данными химического анализа, рентгено-диффракционных измерений и измерений удельной поверхности. Окисление метанола до формальдегида проводили в трубчатом реак-торе с зафиксированной подложкой.
    Notes: Abstract Two iron-molybdenum oxide catalysts have been prepared adding chromium to one of them as a promoter. Both catalysts, together with a commercial one, have been characterized by chemical analysis, X-ray diffraction and specific surface measurements. The oxidation of methanol to formaldehyde has been performed using a tubular fixed bed reactor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02126274
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  • 9
    Electronic Resource
    Electronic Resource
    Optimizing the results in alpha-spectrometry of very low-level activity samples when the spike used is present in the sample (1995)
    Springer
    Journal of radioanalytical and nuclear chemistry 196 (1995), S. 345-351 
    Details
    ISSN: 1588-2780
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Energy, Environment Protection, Nuclear Power Engineering
    Notes: Abstract Determination of very low-level activity in samples using α-spectrometry is possible due to the low background. In order to determine the chemical yield in the separation of the element of interest, a spike must be added to the sample. In many practical cases there is no adequate spike or it is not available in the laboratory. In these cases a spike of the radionuclide already pesent in the sample can be used as the so-called inner standard method. In order to achieve the best results the optimal quantity and the spike to choose must be determined to reduce the uncertainties associated with the activities. The present work is a systematic study of these problems. These considerations were used to the determination of thorium in environmental samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02038054
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  • 10
    Electronic Resource
    Electronic Resource
    Study of the radial and axial distribution of heavy metals in oak growth rings by stripping voltammetry (1991)
    Weinheim : Wiley-Blackwell
    Electroanalysis 3 (1991), S. 325-329 
    Details
    ISSN: 1040-0397
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: The concentrations of the heavy metals (Cd, Pb, Cu, and Zn) have been determined in oak growth rings from the polluted region of Königstein, Germany, by differential pulse anodic stripping voltammetry and compared to those in soil. The radial distribution was found to be the same for all four metals studied and features a distinct increase in the recent growth rings and a marginal increase in the transition zone between sapwood and heartwood. The toxic metals cadmium and lead are preferentially bound to lower parts of the tree, whereas for essential metals copper and zinc, monotonous axial distribution has been found in the range 0-5 m. This points to different degrees of mobility of heavy metal complexes in wood material.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/elan.1140030413
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