ISSN:
1434-6036
Keywords:
PACS. 75.70.-i Magnetic properties of thin films, surfaces, and interfaces – 73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects) – 85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract: We present a quantum mechanical model of the magnetoresistance in ferromagnetic tunnel junctions artificially doped by the introduction of layers of impurities in the middle of the barrier. The electron transport across the barrier is described by a combination of direct tunneling, tunneling assisted by spin-conserving scattering and tunneling assisted by spin-flip scattering. With this model, we interpret recent experimental results concerning the dependence of the TMR amplitude on the amount of impurities in the barrier and on temperature.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1140/e10051-002-0001-2
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