ISSN:
1057-9257
Keywords:
Energy spectrum
;
2D systems
;
Gapless semiconductor
;
Magnetic field
;
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
An exact solution for the zero boundary condition of the problem of carriers in spatially confined gapless semiconductors in a magnetic field is presented. Three cases are analysed: (i) the semiconductor occupies a half-space and the magnetic field orientatin is H ⊥ n (n is the surface normal); (ii) and (iii) a film of a gapless semiconductor at two orientations of the magnetic field, i.e. H ⊥ n and H | n respectively. It is shown that since the energy spectrum of gapless semiconductors is formed by strong relativistic spin-orbit interaction, significant peculiarities of the quantisation of the electron energy spectrum occur in all cases considered. Experiments to check the results obtained are discussed.
Additional Material:
6 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/amo.860030109
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