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  • 1
    Publication Date: 2018-06-08
    Description: The basic requirement of solar cell modules for space applications are generally described in MIL-S-83576 for the specific needs of the USAF. However, the specifications of solar cells intended for use on space terrestrial applications are not well defined. Therefore this qualification test effort was concentrated on critical areas specific to the microseismometer probe which is intended to be included in the Mars microprobe programs.
    Keywords: Energy Production and Conversion
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  • 2
    Publication Date: 2019-07-12
    Description: Electrical measurements on shallow Si n+-p junction diodes with a 30-nm TiSi2 contacting layer demonstrate that an 80-nm-thick amorphous Ta36Si14N50 film prepared by reactive RF sputtering of a Ta5Si3 target in an Ar/N2 plasma very effectively prevents the interaction between the Si substrate with the TiSi2 contacting layer and a 500-nm Cu overlayer. The Ta36Si14N50 diffusion barrier maintains the integrity of the I-V characteristics up to 900 C for 30-min annealing in vacuum. It is concluded that the amorphous Ta36Si14N50 alloy is not only a material with a very low reactivity for copper, titanium, and silicon, but must have a small diffusivity for copper as well.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: IEEE Electron Device Letters (ISSN 0741-3106); 12; 321-323
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  • 3
    Publication Date: 2019-07-13
    Description: The reaction between a sputtered-deposited Ta film (320 nm thick) and a single crystalline (001) beta-SiC substrate induced by vacuum annealing at temperatures of 600-1200 C for 1 h (30 min at 1100 C) is investigated by 3 MeV He(+2) backscattering spectrometry, x-ray diffraction, secondary ion mass spectrometry, and transmission and scanning electron microscopies. No significant reaction is observed at 800 C or at lower tempertures. At 900 C, the main product phases are Ta2C and carbon-stabilized Ta5Si3. A minor amount of unreacted Ta is also present. After annealing at 1000 C, all the tantalum has reacted; the reaction zone possesses a multilayered structure of beta-SiC/TaC/carbon-stabilized Ta5Si3/alpha-Ta5Si3/Ta2C. The diffusion path at 1000 C is plotted on the isothermal section of the Ta-Si-C phase diagram. At 1100 C, the reacted layer has an interface with the SiC substrate that is still quite flat but has a rough surface due to the formation of macroscopic voids within the reacted layer. The equilibrium products predicted by the phase diagram are TaC and TaSi2. This final state is reached by annealing at 1200 C for 1 h. At that point, the reacted layer has a latterally very uneven structure and morphology.
    Keywords: SOLID-STATE PHYSICS
    Type: Journal of Applied Physics (ISSN 0021-8979); 76; 4; p. 2169-2175
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  • 4
    Publication Date: 2019-07-13
    Description: This slide presentation focuses on the dynamic mechanical response and fatigue behavior in sub-micron thick Au-films deposited onto amorphous Si(sub X)N(sub y) substrates, with spider-web geometry, that were subjected to forced vibration (3-axis random vibration with 2 kHz roll-off frequency). The work is to advance cyrogenic detectors that can operate at 100mK, that is required to create cryogenic detectors that are to search for present day signatures of the big bang.
    Keywords: Composite Materials
    Type: 2005 Fall Meeting of the Materials Research Society, Symposium Q: Degradation Processes in Nanostructured Materials; 28 Nov. - 2 Dec. 2005; Boston, MA; United States
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  • 5
    Publication Date: 2019-07-10
    Description: The basic requirements of solar cell modules for space applications are generally described in MIL-S-83576 for the specific needs of the USAF. However, the specifications of solar cells intended for use on space terrestrial applications are not well defined. Therefore, this qualifications test effort was concentrated on critical areas specific to the microseismometer probe which is intended to be included in the Mars microprobe programs. Parameters that were evaluated included performance dependence on: illuminating angles, terrestrial temperatures, lifetime, as well as impact landing conditions. Our qualification efforts were limited to these most critical areas of concern. Most of the tested solar cell modules have met the requirements of the program except the impact tests. Surprisingly, one of the two single PIN 2 x 1 amorphous solar cell modules continued to function even after the 80000G impact tests. The output power parameters, Pout, FF, Isc and Voc, of the single PIN amorphous solar cell module were found to be 3.14 mW, 0.40, 9.98 mA and 0.78 V, respectively. These parameters are good enough to consider the solar module as a possible power source for the microprobe seismometer. Some recommendations were made to improve the usefulness of the amorphous silicon solar cell modules in space terrestrial applications, based on the results obtained from the intensive short term lab test effort.
    Keywords: Solid-State Physics
    Type: Proceedings of the 15th Space Photovoltaic Research and Technology Conference; 257-266; NASA/CP-2004-212735
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  • 6
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pt/Ge/Au trilayers of various Pt:Ge compositions, overlaid with a Ta-Si-N barrier layer and an Au metallization layer, are investigated as ohmic contacts to n-type GaAs. After annealing in flowing argon at 450 °C for 15 min, a contact resistivity of 3.7×10−6 Ω cm2 is obtained for the sample of atomic ratio Pt/Ge=1. The contact resistivity of this sample degrades only slightly to 5.0×10−6 Ω cm2 upon aging at 450 °C for 60 h, while the surface stays smooth. Contact resistivities of samples with other Pt/Ge atomic ratios are in the range of 10−5–10−4 Ω cm2. To understand this electrical behavior, the contacts are characterized by backscattering spectrometry, x-ray diffraction, and transmission electron microscopy in conjunction with energy-dispersive analysis of x rays. The reaction products vary with the Pt:Ge compositions due to the difference of the chemical reactivity between Pt, Ge, and GaAs. The formation and distribution of a ternary PtGe:As phase are the determining factors for the contact resistivity. The outstanding thermal stability of the contact is due to the Ta-Si-N barrier layer which closes the GaAs-trilayer system and protects their chemical equilibria from being disrupted by an inflow of Au from the metallization layer. Without the barrier layer, the morphology of the contact degrades badly at 450 °C after 20 h or less.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: M–Si–N and M–Si (M=Mo, Ta, or W) thin films, reactively sputtered from M5Si3 and WSi2 targets, are examined as diffusion barriers for aluminum metallizations of silicon. Methods of analysis include electrical tests of shallow-junction diodes, 4He++ backscattering spectrometry, x-ray diffraction, transmission electron microscopy, scanning electron microscopy, and secondary-ion-mass spectrometry. At the proper compositions, the M–Si–N films prevent Al overlayers from electrically degrading shallow-junction diodes after 10 min anneals above the melting point of aluminum. Secondary-ion-mass spectrometry indicates virtually no diffusivity of Al into the M–Si–N films during a 700 °C/10 h treatment. The stability can be partially attributed to a self-sealing 3-nm-thick AlN layer that grows at the M–Si–N/Al interface, as seen by transmission electron microscopy. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2169-2175 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reaction between a sputter-deposited Ta film (320 nm thick) and a single crystalline (001) β-SiC substrate induced by vacuum annealing at temperatures of 600–1200 °C for 1 h (30 min at 1100 °C) is investigated by 3 MeV He++ backscattering spectrometry, x-ray diffraction, secondary ion mass spectrometry, and transmission and scanning electron microscopies. No significant reaction is observed at 800 °C or at lower temperatures. At 900 °C, the main product phases are Ta2C and carbon-stabilized Ta5Si3. A minor amount of unreacted Ta is also present. After annealing at 1000 °C, all the tantalum has reacted; the reaction zone possesses a multilayered structure of β-SiC/TaC/carbon-stabilized Ta5Si3/α-Ta5Si3/Ta2C. The diffusion path at 1000 °C is plotted on the isothermal section of the Ta-Si-C phase diagram. At 1100 °C, the reacted layer has an interface with the SiC substrate that is still quite flat but has a rough surface due to the formation of macroscopic voids within the reacted layer. The equilibrium products predicted by the phase diagram are TaC and TaSi2. This final state is reached by annealing at 1200 °C for 1 h. At that point, the reacted layer has a laterally very uneven structure and morphology.
    Type of Medium: Electronic Resource
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