ISSN:
1090-6533
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract The luminescence properties of a GaN/Al0.1Ga0.9N double heterostructure grown by vapor-phase deposition from organometallic compounds are studied. When luminescence is observed from the end, the radiation intensity shows a sharply defined threshold dependence on the pump density. The threshold excitation density at T=77 K was ∼40 kW/cm2 and the wavelength of the stimulated emission was λ=357 nm. The long-wavelength shift of the emission line at high pump densities may be attributed to renormalization of the band gap caused by many-particle interactions in the electron-hole plasma.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1261764
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