ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Nanophase Ceramics by the Sol-Gel Process (1994)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 152-153 (Mar. 1994), p. 149-154 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/00/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.152-153.149.pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Elaboration of III-V Nitrides Quantum Dots in Molecular Beam Epitaxy (1998)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 264-268 (Feb. 1998), p. 1177-1180 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/03/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.264-268.1177.pdf
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Structure determination of planar defects in crystals of germanium and molybdenum by HREM (1988)
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 44 (1988), S. 838-847 
    Details
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: The possibility of the structure determination of planar defects in crystals by high-resolution electron microscopy (HREM) is presented. The optimum conditions for a direct visual interpretation of the projected structure are discussed using two typical examples: a Σ = 5 tilt grain boundary in germanium and a Σ = 41 grain boundary in molybdenum. It is shown that two particular defect images taken at the Scherzer defocus and at reverse contrast enable an approximate input structure to be found which can be employed to start a trial-and-error method. A practical procedure improving this input structure is proposed on the basis of the calculated positioning errors. It is demonstrated that positioning errors are mainly due to the electron microscope transfer function. The effect of crystal tilt is shown to modify greatly the atomic column visibility at the interface plane. Finally three-dimensional analysis of an interface is proposed by observation of it along two (or more) low-index axes. This procedure is illustrated on the Ge Σ = 5 grain boundary observed along [001] and [310].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108767388004726
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Low temperature sapphire nitridation: A clue to optimize GaN layers grown by molecular beam epitaxy (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 1550-1555 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The sapphire nitridation temperature is investigated as a possible parameter to improve the properties of GaN epilayers grown by molecular beam epitaxy using a radio frequency plasma source. It is found out that lowering the nitridation temperature to values as low as 200 °C allows us to drastically improve the GaN structural and optical properties. Careful examination of the interface by transmission electron microscopy reveals that, in this case, the interface between the nitridated sapphire and the AlN buffer consists of an ordered array of pure edge dislocations. In contrast, high nitridation temperatures result in a perturbed interface with the occurrence of cubic crystallites in the AlN buffer. These results, complemented by a thorough reflection high-energy electron diffraction analysis of the nitridation procedure and a secondary ion mass spectrometry investigation, are interpreted in the framework of a model whereby a higher oxygen concentration is extracted from the substrate at high nitridation temperature, leading to the formation of cubic grains with a smaller lattice parameter than the surrounding matrix and to the concomitant occurrence of defects within the buffer. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369286
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Atomic layer epitaxy and molecular beam epitaxy of CdTe/MnTe superlattices: A structural and optical study (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 4300-4308 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomic layer epitaxy (ALE) is investigated together with conventional molecular beam epitaxy (MBE) for the growth of CdTe/MnTe superlattices. A systematic structural and magneto-optical study demonstrates that: (i) all Mn atoms incident on the surface get incorporated; however, when a quantity superior or equal to 1 monolayer of Mn is sent onto the surface per ALE cycle, the growth front roughens, leading to the formation of MnTe islands, (ii) optimized atomic layer epitaxy allows us to obtain at 280 °C CdTe/MnTe superlattices with a better control than in conventional MBE, but does not prevent the exchange between Cd and Mn atoms from occurring at the interfaces, (iii) low temperature ALE (200 °C and lower) seems to be a promising way of obtaining more abrupt interfaces. A precise value of the ratio of the elastic coefficients 2c12/c11 is otherwise inferred through this study for zincblende MnTe (1.12). © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368648
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Zero-dimensional excitons in CdTe/ZnTe nanostructures (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 4936-4943 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin CdTe layers embedded in ZnTe matrix grown by atomic layer epitaxy have been studied by time resolved spectroscopy and spatially resolved spectroscopy. The presence of Cd-rich dotlike islands in these CdTe nanostructures is shown by both atomic force microscopy and high resolution transmission electron microscopy. Zero-dimensional nature of excitons is shown both by the temperature dependence of the decay time and observation of sharp exciton lines in microphotoluminescence spectra. Zero-dimensional excitons probed by microphotoluminescence present a doublet structure linearly polarized along two orthogonal directions. This doublet structure is attributed to bright heavy-hole exciton states split by the local asymmetry of the localization potential. Reversible spectral shifts in the emission of some single quantum dots are observed on a time scale of hundreds of milliseconds. These small shifts can be attributed to the Stark effect caused by fluctuating electric fields and can significantly affect time-integrated transition linewidths. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1436560
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Atomic-layer epitaxy of GaN quantum wells and quantum dots on (0001) AlN (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5498-5500 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that a dynamically stable Ga film is formed on (0001) AlN in a large range of Ga fluxes at a substrate temperature of 740 °C. This feature allows for atomic layer epitaxy (ALE) of GaN on AlN by alternate exposure to Ga and N flux. We show that, at a growth temperature of 740 °C, one ALE cycle leads to the formation of a two-dimensional GaN layer, whereas further cycles lead to the formation of GaN quantum dots following a Stranski–Krastanov growth mode. This behavior is confirmed by atomic force microscopy, transmission electron microscopy, and cathodoluminescence. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1458049
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Huge differences between low- and high-angle twist grain boundaries: The case of ultrathin (001) Si films bonded to (001) Si wafers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1135-1137 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrathin (001) Si films bonded onto (001) Si wafers, inducing grain boundaries with twist angles varying from 0.5° to 12°, were studied by transmission electron microscopy. A great structural difference between low (ψ〈5°) and high (ψ〉6°) twist angles was observed. In low twist angle grain boundaries, "twist interfacial dislocations" are dissociated and produce rough interfaces with no oxide precipitates. It is the opposite in high-angle grain boundaries: there is no dissociation, the interfaces are smoother but contain oxide precipitates. These differences are not attributed to the thin thickness of one grain, but to the large atomic differences between high- and low-angle twist grain boundaries, which is not the case for tilt grain boundaries. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1289656
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Quantitative characterization of GaN quantum-dot structures in AlN by high-resolution transmission electron microscopy (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3287-3289 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN/AlN heterostructures grown by molecular beam epitaxy are studied by high-resolution transmission electron microscopy (HRTEM). The two-dimensional/three-dimensional Stranski–Krastanow growth mode transition of GaN allows the formation of GaN quantum-dot structures embedded in AlN. The nature of the wetting layer associated with these dots is determined by quantitative HRTEM analysis, based on comparison between interplanar distortion profiles of experimental and simulated images. This study demonstrates a low intermixing between GaN and AlN materials. Such result is also evidenced for the GaN dots. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123321
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Polarity determination for GaN films grown on (0001) sapphire and high-pressure-grown GaN single crystals (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 668-670 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to resolve any doubt in lattice polarity calibrations, a given undoped GaN layer deposited on (0001) sapphire by metalorganic chemical vapor deposition and a given high-pressure-grown GaN single crystal have been studied by three different techniques: Hemispherically scanned x-ray photoelectron diffraction, convergent beam electron diffraction, and chemical etching. We conclude that Ga-polar surfaces are resistant to a 200 °C molten NaOH+KOH etching whereas N-polar surfaces are chemically active. All the observed flat GaN films grown on (0001) sapphire have Ga polarity. On the contrary, the native flat faces of undoped GaN bulk crystals have N polarity. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121942
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...